A study on annealing mechanisms with different manganese contents in CuMn alloy
► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn f...
Gespeichert in:
| Veröffentlicht in: | Journal of alloys and compounds 2012-11, Vol.542, p.118-123 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 123 |
|---|---|
| container_issue | |
| container_start_page | 118 |
| container_title | Journal of alloys and compounds |
| container_volume | 542 |
| creator | Wu, Chia-Yang Wu, Chi-Ting Lee, Wen-Hsi Chang, Shih-Chieh Wang, Ying-Lang |
| description | ► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn film demonstrates the best barrier properties.
In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1–10at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu–Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu–Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500°C under vacuum condition. However, no agglomeration and Cu were found in the SiO2 layer using Cu–Mn alloy with an appropriate amount of Mn, suggesting that a MnSixOy layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5at.% Mn film demonstrates the best barrier properties. |
| doi_str_mv | 10.1016/j.jallcom.2012.06.093 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1136553963</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925838812010754</els_id><sourcerecordid>1136553963</sourcerecordid><originalsourceid>FETCH-LOGICAL-c372t-833a42b0badbcf9317345028a4c84e7dceb60546c43886c3534d0b59513e1c553</originalsourceid><addsrcrecordid>eNqFkEtLxDAUhYMoOD5-gpCN4GZq0jzarkQGX6DMRtchvb0dM6SpJh1l_r2RGdy6unD5zj3nHkIuOCs44_p6Xayt9zAORcl4WTBdsEYckBmvKzGXWjeHZMaaUs1rUdfH5CSlNWOMN4LPyPKWpmnTbekYqA0BrXdhRQeEdxtcGhL9dtM77VzfY8Qw0cGGlQ2YkMIYprxJ1AW62Lxkuffj9owc9dYnPN_PU_J2f_e6eJw_Lx-eFrfPcxBVOeUkwsqyZa3tWuhzkkpIxcraSqglVh1gq5mSGmSOrEEoITvWqkZxgRyUEqfkanf3I46fG0yTGVwC9D6HGzfJcC50xhotMqp2KMQxpYi9-YhusHFrODO_BZq12Rdofgs0TJtcYNZd7i1sAuv7aAO49CcutZQlr2TmbnYc5n-_HEaTwGEA7FxEmEw3un-cfgCq74ia</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1136553963</pqid></control><display><type>article</type><title>A study on annealing mechanisms with different manganese contents in CuMn alloy</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Wu, Chia-Yang ; Wu, Chi-Ting ; Lee, Wen-Hsi ; Chang, Shih-Chieh ; Wang, Ying-Lang</creator><creatorcontrib>Wu, Chia-Yang ; Wu, Chi-Ting ; Lee, Wen-Hsi ; Chang, Shih-Chieh ; Wang, Ying-Lang</creatorcontrib><description>► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn film demonstrates the best barrier properties.
In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1–10at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu–Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu–Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500°C under vacuum condition. However, no agglomeration and Cu were found in the SiO2 layer using Cu–Mn alloy with an appropriate amount of Mn, suggesting that a MnSixOy layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5at.% Mn film demonstrates the best barrier properties.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2012.06.093</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Annealing ; Barrier ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Copper ; Copper base alloys ; Cross-disciplinary physics: materials science; rheology ; Cu–Mn alloy ; Diffusion ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Manganese ; Materials science ; Metals and metallic alloys ; Methods of deposition of films and coatings; film growth and epitaxy ; Other nonelectronic physical properties ; Physical properties of thin films, nonelectronic ; Physics ; Self-formed ; Semiconductors ; Silicon dioxide ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth</subject><ispartof>Journal of alloys and compounds, 2012-11, Vol.542, p.118-123</ispartof><rights>2012</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-833a42b0badbcf9317345028a4c84e7dceb60546c43886c3534d0b59513e1c553</citedby><cites>FETCH-LOGICAL-c372t-833a42b0badbcf9317345028a4c84e7dceb60546c43886c3534d0b59513e1c553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2012.06.093$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26442174$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Chia-Yang</creatorcontrib><creatorcontrib>Wu, Chi-Ting</creatorcontrib><creatorcontrib>Lee, Wen-Hsi</creatorcontrib><creatorcontrib>Chang, Shih-Chieh</creatorcontrib><creatorcontrib>Wang, Ying-Lang</creatorcontrib><title>A study on annealing mechanisms with different manganese contents in CuMn alloy</title><title>Journal of alloys and compounds</title><description>► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn film demonstrates the best barrier properties.
In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1–10at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu–Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu–Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500°C under vacuum condition. However, no agglomeration and Cu were found in the SiO2 layer using Cu–Mn alloy with an appropriate amount of Mn, suggesting that a MnSixOy layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5at.% Mn film demonstrates the best barrier properties.</description><subject>Annealing</subject><subject>Barrier</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Copper</subject><subject>Copper base alloys</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Cu–Mn alloy</subject><subject>Diffusion</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Manganese</subject><subject>Materials science</subject><subject>Metals and metallic alloys</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Other nonelectronic physical properties</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Self-formed</subject><subject>Semiconductors</subject><subject>Silicon dioxide</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxDAUhYMoOD5-gpCN4GZq0jzarkQGX6DMRtchvb0dM6SpJh1l_r2RGdy6unD5zj3nHkIuOCs44_p6Xayt9zAORcl4WTBdsEYckBmvKzGXWjeHZMaaUs1rUdfH5CSlNWOMN4LPyPKWpmnTbekYqA0BrXdhRQeEdxtcGhL9dtM77VzfY8Qw0cGGlQ2YkMIYprxJ1AW62Lxkuffj9owc9dYnPN_PU_J2f_e6eJw_Lx-eFrfPcxBVOeUkwsqyZa3tWuhzkkpIxcraSqglVh1gq5mSGmSOrEEoITvWqkZxgRyUEqfkanf3I46fG0yTGVwC9D6HGzfJcC50xhotMqp2KMQxpYi9-YhusHFrODO_BZq12Rdofgs0TJtcYNZd7i1sAuv7aAO49CcutZQlr2TmbnYc5n-_HEaTwGEA7FxEmEw3un-cfgCq74ia</recordid><startdate>20121125</startdate><enddate>20121125</enddate><creator>Wu, Chia-Yang</creator><creator>Wu, Chi-Ting</creator><creator>Lee, Wen-Hsi</creator><creator>Chang, Shih-Chieh</creator><creator>Wang, Ying-Lang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20121125</creationdate><title>A study on annealing mechanisms with different manganese contents in CuMn alloy</title><author>Wu, Chia-Yang ; Wu, Chi-Ting ; Lee, Wen-Hsi ; Chang, Shih-Chieh ; Wang, Ying-Lang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-833a42b0badbcf9317345028a4c84e7dceb60546c43886c3534d0b59513e1c553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Barrier</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Copper</topic><topic>Copper base alloys</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Cu–Mn alloy</topic><topic>Diffusion</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Manganese</topic><topic>Materials science</topic><topic>Metals and metallic alloys</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Other nonelectronic physical properties</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Self-formed</topic><topic>Semiconductors</topic><topic>Silicon dioxide</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Chia-Yang</creatorcontrib><creatorcontrib>Wu, Chi-Ting</creatorcontrib><creatorcontrib>Lee, Wen-Hsi</creatorcontrib><creatorcontrib>Chang, Shih-Chieh</creatorcontrib><creatorcontrib>Wang, Ying-Lang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Chia-Yang</au><au>Wu, Chi-Ting</au><au>Lee, Wen-Hsi</au><au>Chang, Shih-Chieh</au><au>Wang, Ying-Lang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study on annealing mechanisms with different manganese contents in CuMn alloy</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2012-11-25</date><risdate>2012</risdate><volume>542</volume><spage>118</spage><epage>123</epage><pages>118-123</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn film demonstrates the best barrier properties.
In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1–10at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu–Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu–Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500°C under vacuum condition. However, no agglomeration and Cu were found in the SiO2 layer using Cu–Mn alloy with an appropriate amount of Mn, suggesting that a MnSixOy layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5at.% Mn film demonstrates the best barrier properties.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2012.06.093</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0925-8388 |
| ispartof | Journal of alloys and compounds, 2012-11, Vol.542, p.118-123 |
| issn | 0925-8388 1873-4669 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1136553963 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Annealing Barrier Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Copper Copper base alloys Cross-disciplinary physics: materials science rheology Cu–Mn alloy Diffusion Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Manganese Materials science Metals and metallic alloys Methods of deposition of films and coatings film growth and epitaxy Other nonelectronic physical properties Physical properties of thin films, nonelectronic Physics Self-formed Semiconductors Silicon dioxide Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth |
| title | A study on annealing mechanisms with different manganese contents in CuMn alloy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T15%3A04%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20study%20on%20annealing%20mechanisms%20with%20different%20manganese%20contents%20in%20CuMn%20alloy&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Wu,%20Chia-Yang&rft.date=2012-11-25&rft.volume=542&rft.spage=118&rft.epage=123&rft.pages=118-123&rft.issn=0925-8388&rft.eissn=1873-4669&rft_id=info:doi/10.1016/j.jallcom.2012.06.093&rft_dat=%3Cproquest_cross%3E1136553963%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1136553963&rft_id=info:pmid/&rft_els_id=S0925838812010754&rfr_iscdi=true |