Nanocrystalline Si : H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure

Hydrogenated nanocrystalline silicon (nc-Si : H) films were grown using the plasma-enhanced chemical vapour deposition method, with the plasma operated under a gas pressure of up to 30 mbar, i.e. on the verge of plasma instability. The heating effect in determining the crystallite size and crystalli...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2012-08, Vol.45 (33), p.335104-1-6
Hauptverfasser:	Gao, L, Lu, N P, Liao, L G, Ji, A L, Cao, Z X
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallites Gas pressure Heating Nanocrystals Plasma (physics) Plasma enhanced chemical vapor deposition Silicon Thin films Volume fraction
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!