A 630dpi dynamic LED display array in standard Si-based CMOS technology

A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the p...

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Veröffentlicht in:Science China. Information sciences 2012-10, Vol.55 (10), p.2409-2416
Hauptverfasser: Dong, Zan, Wang, Wei, Huang, BeiJu, Zhang, Xu, Guan, Ning, Chen, HongDa
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container_issue 10
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creator Dong, Zan
Wang, Wei
Huang, BeiJu
Zhang, Xu
Guan, Ning
Chen, HongDa
description A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent flashing. As a result, the control logic is perfectly integrated on the same wafer. Two power sources are used to drive the display array because the LEDs operate at high voltage (supply voltage of 9 V), and the current of the whole display array is about 30-60 mA to display common characters. The display circuit includes digital control logic circuits and SRAM, and requires a supply voltage of 3.3 V. The area of a single pixel is 40×40 μm2, the area of the whole 16×16 LED array is 1 mm2, and the display density is 630 dpi.
doi_str_mv 10.1007/s11432-011-4498-y
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subjects Arrays
CMOS
CMOS技术
Computer Science
Electric potential
Information Systems and Communication Service
LED显示
LED阵列
Light emitting diodes
Logic circuits
Pixels
Power sources
Random access memory
Research Paper
Silicon
SRAM
Static random access memory
Voltage
标准
电源电压
硅发光二极管
静态随机存取存储器
title A 630dpi dynamic LED display array in standard Si-based CMOS technology
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