A 630dpi dynamic LED display array in standard Si-based CMOS technology
A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the p...
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Veröffentlicht in: | Science China. Information sciences 2012-10, Vol.55 (10), p.2409-2416 |
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creator | Dong, Zan Wang, Wei Huang, BeiJu Zhang, Xu Guan, Ning Chen, HongDa |
description | A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent flashing. As a result, the control logic is perfectly integrated on the same wafer. Two power sources are used to drive the display array because the LEDs operate at high voltage (supply voltage of 9 V), and the current of the whole display array is about 30-60 mA to display common characters. The display circuit includes digital control logic circuits and SRAM, and requires a supply voltage of 3.3 V. The area of a single pixel is 40×40 μm2, the area of the whole 16×16 LED array is 1 mm2, and the display density is 630 dpi. |
doi_str_mv | 10.1007/s11432-011-4498-y |
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Information sciences, 2012-10, Vol.55 (10), p.2409-2416</ispartof><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2012</rights><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2012.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c327t-cc64b3db8e86ecdb9dbfb76b327d7c4948c768700f515871318ad6890af7d2a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84009A/84009A.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11432-011-4498-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918571268?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,21367,27901,27902,33721,33722,41464,42533,43781,51294</link.rule.ids></links><search><creatorcontrib>Dong, Zan</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Huang, BeiJu</creatorcontrib><creatorcontrib>Zhang, Xu</creatorcontrib><creatorcontrib>Guan, Ning</creatorcontrib><creatorcontrib>Chen, HongDa</creatorcontrib><title>A 630dpi dynamic LED display array in standard Si-based CMOS technology</title><title>Science China. Information sciences</title><addtitle>Sci. China Inf. Sci</addtitle><addtitle>SCIENCE CHINA Information Sciences</addtitle><description>A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent flashing. As a result, the control logic is perfectly integrated on the same wafer. Two power sources are used to drive the display array because the LEDs operate at high voltage (supply voltage of 9 V), and the current of the whole display array is about 30-60 mA to display common characters. The display circuit includes digital control logic circuits and SRAM, and requires a supply voltage of 3.3 V. The area of a single pixel is 40×40 μm2, the area of the whole 16×16 LED array is 1 mm2, and the display density is 630 dpi.</description><subject>Arrays</subject><subject>CMOS</subject><subject>CMOS技术</subject><subject>Computer Science</subject><subject>Electric potential</subject><subject>Information Systems and Communication Service</subject><subject>LED显示</subject><subject>LED阵列</subject><subject>Light emitting diodes</subject><subject>Logic circuits</subject><subject>Pixels</subject><subject>Power sources</subject><subject>Random access memory</subject><subject>Research Paper</subject><subject>Silicon</subject><subject>SRAM</subject><subject>Static random access memory</subject><subject>Voltage</subject><subject>标准</subject><subject>电源电压</subject><subject>硅发光二极管</subject><subject>静态随机存取存储器</subject><issn>1674-733X</issn><issn>1869-1919</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kMFOAjEQhjdGEwnyAN5qvHipdtrSdo8EEU0wHNDEW9Ntu7Bk2YUWDvv2lkA08eAcZiaZ75-Z_Fl2C-QRCJFPEYAzigkA5jxXuLvIeqBEjiGH_DL1QnIsGfu6zgYxrkkKxgiVqpdNR0gw4rYVcl1jNpVFs8kzclXc1qZDJoSUqwbFvWmcCQ4tKlyY6B0av88XaO_tqmnrdtndZFelqaMfnGs_-3yZfIxf8Ww-fRuPZtgyKvfYWsEL5grllfDWFbkrykKKIg2dtDznykqhJCHlEIZKAgNlnFA5MaV01EjWzx5Oe7eh3R183OtNFa2va9P49hA1ABOcK6A0ofd_0HV7CE36TtMc1FACFSpRcKJsaGMMvtTbUG1M6DQQfXRXn9zVyV19dFd3SUNPmpjYZunD7-b_RHfnQ6u2We6S7udSIoFRAuwbq_eFkg</recordid><startdate>20121001</startdate><enddate>20121001</enddate><creator>Dong, Zan</creator><creator>Wang, Wei</creator><creator>Huang, BeiJu</creator><creator>Zhang, Xu</creator><creator>Guan, Ning</creator><creator>Chen, HongDa</creator><general>SP Science China Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>7SC</scope><scope>8FD</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20121001</creationdate><title>A 630dpi dynamic LED display array in standard Si-based CMOS technology</title><author>Dong, Zan ; 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The SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent flashing. As a result, the control logic is perfectly integrated on the same wafer. Two power sources are used to drive the display array because the LEDs operate at high voltage (supply voltage of 9 V), and the current of the whole display array is about 30-60 mA to display common characters. The display circuit includes digital control logic circuits and SRAM, and requires a supply voltage of 3.3 V. The area of a single pixel is 40×40 μm2, the area of the whole 16×16 LED array is 1 mm2, and the display density is 630 dpi.</abstract><cop>Heidelberg</cop><pub>SP Science China Press</pub><doi>10.1007/s11432-011-4498-y</doi><tpages>8</tpages></addata></record> |
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subjects | Arrays CMOS CMOS技术 Computer Science Electric potential Information Systems and Communication Service LED显示 LED阵列 Light emitting diodes Logic circuits Pixels Power sources Random access memory Research Paper Silicon SRAM Static random access memory Voltage 标准 电源电压 硅发光二极管 静态随机存取存储器 |
title | A 630dpi dynamic LED display array in standard Si-based CMOS technology |
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