Laser induced changes of As50Se50 nanolayers studied by synchrotron radiation photoelectron spectroscopy

The influence of near bandgap laser irradiation on the structure of the As50Se50 thin film has been investigated by synchrotron radiation photoelectron spectroscopy. The As 3d and Se 3d photoemission peaks of the irradiated sample show significant differences in shapes and positions in comparison with those obtained for non-irradiated amorphous film. The experimental data processing and quantifications are performed analyzing As 3d and Se 3d core-level components obtained by curve fitting. The relative contribution of the As and Se atoms in different chemical states to the whole As 3d and Se 3d signal, its structural origins as well as their relation to the As50Se50 nanolayers structure before and after laser irradiation is analyzed and discussed in detail. ► Stoichiometry changes of As50Se50 nanolayers under air and/or light exposure ► Effect of the ambient condition on the structure of As50Se50 surface nanolayers ► Transformation of As50Se50 surface nanolayers under near bandgap illumination ► Surface sensitive synchrotron radiation photoelectron spectroscopy experiments