RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors

ZnO films were processed by radiofrequency (RF) magnetron sputtering under argon gas environment at room temperature, varying the RF power (90 W, 100 W, 150 W, and 200 W), on p -Si/SiO 2 substrates. Structural, morphological, and electrical characteristics of the ZnO films were determined using seve...

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Veröffentlicht in:	Journal of electronic materials 2012-07, Vol.41 (7), p.1962-1969
Hauptverfasser:	Medina-Montes, M.I., Arizpe-Chávez, H., Baldenegro-Pérez, L.A., Quevedo-López, M.A., Ramírez-Bon, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic force microscopy Channels Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Deposition by sputtering Electric power generation Electronics Electronics and Microelectronics Exact sciences and technology Grain size Instrumentation Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Physics Radio frequencies Radio frequency Refractivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Transistors Zinc oxide
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