Illumination instabilities in ZnO/HfO2 thin-film transistors and influence of grain boundary charge
The illumination instabilities of nanocrystalline ZnO thin-film transistors (TFT) with HfO2 gate dielectrics are reported via zero gate bias multiwave length illumination stress method. TFT ID–VG curves exhibit a negative threshold voltage shift together with an increase in ID off current and increa...
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| Veröffentlicht in: | Journal of materials research 2012-09, Vol.27 (17), p.2199-2204 |
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| container_issue | 17 |
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| container_title | Journal of materials research |
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| creator | Siddiqui, Jeffrey J. Phillips, Jamie D. Leedy, Kevin Bayraktaroglu, Burhan |
| description | The illumination instabilities of nanocrystalline ZnO thin-film transistors (TFT) with HfO2 gate dielectrics are reported via zero gate bias multiwave length illumination stress method. TFT ID–VG curves exhibit a negative threshold voltage shift together with an increase in ID off current and increase in subthreshold slope with increasing photon energy and illumination time. Analysis of transistor characteristics indicates that one component governing negative threshold voltage shifts is a decrease in grain boundary-trapped charge areal density due to illumination. This relationship can be explained by conduction based on thermionic emission over potential barriers formed at the ZnO crystallite boundaries. ID off-state current trends with photon energy in a manner consistent with exponentially decreasing absorption below the conduction band edge. |
| doi_str_mv | 10.1557/jmr.2012.173 |
| format | Article |
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| source | Cambridge Journals; SpringerLink Journals - AutoHoldings |
| subjects | Analysis Applied and Technical Physics Biomaterials Charge Crystals Dielectrics Energy Grain boundaries Hafnium oxide Illumination Inorganic Chemistry Instability Light emitting diodes Materials Engineering Materials research Materials Science Nanotechnology Photovoltaic cells Radiation Review Semiconductor devices Semiconductors Silicon Stability Studies Thin films Transistors Zinc oxides |
| title | Illumination instabilities in ZnO/HfO2 thin-film transistors and influence of grain boundary charge |
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