High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photon...
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| Veröffentlicht in: | Optics express 2012-07, Vol.20 (16), p.18145-18155 |
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| container_issue | 16 |
| container_start_page | 18145 |
| container_title | Optics express |
| container_volume | 20 |
| creator | Pan, Huapu Assefa, Solomon Green, William M J Kuchta, Daniel M Schow, Clint L Rylyakov, Alexander V Lee, Benjamin G Baks, Christian W Shank, Steven M Vlasov, Yurii A |
| description | The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm. |
| doi_str_mv | 10.1364/OE.20.018145 |
| format | Article |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| title | High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier |
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