Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no sign of parasitic currents...

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Veröffentlicht in:	Optics express 2012-08, Vol.20 (18), p.20647-20658
Hauptverfasser:	Fujita, Kazuue, Yamanishi, Masamichi, Furuta, Shinichi, Tanaka, Kazunori, Edamura, Tadataka, Kubis, Tillmann, Klimeck, Gerhard
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum - chemistry Arsenicals - chemistry Crystallization - methods Equipment Design Equipment Failure Analysis Gallium - chemistry Indium - chemistry Lasers, Solid-State Phase Transition Plasma Gases - chemistry
Online-Zugang:	Volltext
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