Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives
In order to conciliate dielectric and non-Ohmic properties of CaCu 3 Ti 4 O 12 (CCTO) ceramics, NiO, SnO 2 , SiO 2 , and Al 2 O 3 were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investi...
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| Veröffentlicht in: | Journal of materials science 2012-03, Vol.47 (5), p.2294-2299 |
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| container_title | Journal of materials science |
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| creator | Liu, Laijun Huang, Yanmin Li, Yunhua Shi, Danping Zheng, Shaoying Wu, Shuangshuang Fang, Liang Hu, Changzheng |
| description | In order to conciliate dielectric and non-Ohmic properties of CaCu
3
Ti
4
O
12
(CCTO) ceramics, NiO, SnO
2
, SiO
2
, and Al
2
O
3
were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investigated. Among them, NiO-modified CCTO exhibits good dielectric and non-Ohmic properties (
ε
= 69833, tan
δ
= 0.073,
α
= 3.66 and
E
B
= 296.7 V/cm), due to NiO is also one of giant dielectric materials. Therefore, it is suitable for applying semiconductor circuits. The relationship between electrical current density (
J
) and electrical field (
E
) demonstrated that Schottky barrier should exist at grain boundaries. Non-linear coefficient
α
was directly proportional to the height of barrier. Depressing barrier width would improve significantly dielectric permittivity but decrease breakdown voltage. |
| doi_str_mv | 10.1007/s10853-011-6043-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1082222846</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1082222846</sourcerecordid><originalsourceid>FETCH-LOGICAL-c279t-f7892df1f4190e090d518d16e3e0bb4feabcc78c73c2265bb55aec2b58f4da273</originalsourceid><addsrcrecordid>eNp1kU1rHSEUhqU00NukP6A7IZssaqNHHWeW4fYTQmeRZC2OHhPD3JkbnduQf1-HWygU4uKI8LwP6kvIR8E_C87NZRG81ZJxIVjDlWTiDdkIbSRTLZdvyYZzAAaqEe_I-1IeOefagNiQ6UvCEf2Sk6duCnSaJ9Y_7Oppn-c95iVhoXOkW7c9yNukegHUY3aVKHQ3hxQTBvqclgf6K_Wf6M3UQ51pnavvaoReUhdCWtJvLGfkJLqx4Ie_-ym5-_b1dvuDXffff26vrpkH0y0smraDEEVUouPIOx60aINoUCIfBhXRDd6b1hvpARo9DFo79DDoNqrgwMhTcnH01lc8HbAsdpeKx3F0E86HYutvQV2taip6_h_6OB_yVG9nAXRnVGP0KhRHyue5lIzR7nPaufxSVXZtwB4bsLUBuzZgRc3AMVMqO91j_md-PfQHUe6GCg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259746757</pqid></control><display><type>article</type><title>Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives</title><source>SpringerLink Journals - AutoHoldings</source><creator>Liu, Laijun ; Huang, Yanmin ; Li, Yunhua ; Shi, Danping ; Zheng, Shaoying ; Wu, Shuangshuang ; Fang, Liang ; Hu, Changzheng</creator><creatorcontrib>Liu, Laijun ; Huang, Yanmin ; Li, Yunhua ; Shi, Danping ; Zheng, Shaoying ; Wu, Shuangshuang ; Fang, Liang ; Hu, Changzheng</creatorcontrib><description>In order to conciliate dielectric and non-Ohmic properties of CaCu
3
Ti
4
O
12
(CCTO) ceramics, NiO, SnO
2
, SiO
2
, and Al
2
O
3
were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investigated. Among them, NiO-modified CCTO exhibits good dielectric and non-Ohmic properties (
ε
= 69833, tan
δ
= 0.073,
α
= 3.66 and
E
B
= 296.7 V/cm), due to NiO is also one of giant dielectric materials. Therefore, it is suitable for applying semiconductor circuits. The relationship between electrical current density (
J
) and electrical field (
E
) demonstrated that Schottky barrier should exist at grain boundaries. Non-linear coefficient
α
was directly proportional to the height of barrier. Depressing barrier width would improve significantly dielectric permittivity but decrease breakdown voltage.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-011-6043-1</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Additives ; ALUMINUM OXIDE ; Barriers ; CERAMICS ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; COPPER OXIDE ; Crystallography and Scattering Methods ; Dielectric breakdown ; Dielectric properties ; DOPING ; Grain boundaries ; Grain growth ; INSULATION (ELECTRICAL) ; Materials Science ; NICKEL OXIDE ; Nickel oxides ; OXIDES ; Polymer Sciences ; PROPERTIES ; SEMICONDUCTORS ; SILICON DIOXIDE ; Sintering aids ; Solid Mechanics ; Tin dioxide ; Tin oxides</subject><ispartof>Journal of materials science, 2012-03, Vol.47 (5), p.2294-2299</ispartof><rights>Springer Science+Business Media, LLC 2011</rights><rights>Journal of Materials Science is a copyright of Springer, (2011). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c279t-f7892df1f4190e090d518d16e3e0bb4feabcc78c73c2265bb55aec2b58f4da273</citedby><cites>FETCH-LOGICAL-c279t-f7892df1f4190e090d518d16e3e0bb4feabcc78c73c2265bb55aec2b58f4da273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-011-6043-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-011-6043-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Liu, Laijun</creatorcontrib><creatorcontrib>Huang, Yanmin</creatorcontrib><creatorcontrib>Li, Yunhua</creatorcontrib><creatorcontrib>Shi, Danping</creatorcontrib><creatorcontrib>Zheng, Shaoying</creatorcontrib><creatorcontrib>Wu, Shuangshuang</creatorcontrib><creatorcontrib>Fang, Liang</creatorcontrib><creatorcontrib>Hu, Changzheng</creatorcontrib><title>Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>In order to conciliate dielectric and non-Ohmic properties of CaCu
3
Ti
4
O
12
(CCTO) ceramics, NiO, SnO
2
, SiO
2
, and Al
2
O
3
were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investigated. Among them, NiO-modified CCTO exhibits good dielectric and non-Ohmic properties (
ε
= 69833, tan
δ
= 0.073,
α
= 3.66 and
E
B
= 296.7 V/cm), due to NiO is also one of giant dielectric materials. Therefore, it is suitable for applying semiconductor circuits. The relationship between electrical current density (
J
) and electrical field (
E
) demonstrated that Schottky barrier should exist at grain boundaries. Non-linear coefficient
α
was directly proportional to the height of barrier. Depressing barrier width would improve significantly dielectric permittivity but decrease breakdown voltage.</description><subject>Additives</subject><subject>ALUMINUM OXIDE</subject><subject>Barriers</subject><subject>CERAMICS</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>COPPER OXIDE</subject><subject>Crystallography and Scattering Methods</subject><subject>Dielectric breakdown</subject><subject>Dielectric properties</subject><subject>DOPING</subject><subject>Grain boundaries</subject><subject>Grain growth</subject><subject>INSULATION (ELECTRICAL)</subject><subject>Materials Science</subject><subject>NICKEL OXIDE</subject><subject>Nickel oxides</subject><subject>OXIDES</subject><subject>Polymer Sciences</subject><subject>PROPERTIES</subject><subject>SEMICONDUCTORS</subject><subject>SILICON DIOXIDE</subject><subject>Sintering aids</subject><subject>Solid Mechanics</subject><subject>Tin dioxide</subject><subject>Tin oxides</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kU1rHSEUhqU00NukP6A7IZssaqNHHWeW4fYTQmeRZC2OHhPD3JkbnduQf1-HWygU4uKI8LwP6kvIR8E_C87NZRG81ZJxIVjDlWTiDdkIbSRTLZdvyYZzAAaqEe_I-1IeOefagNiQ6UvCEf2Sk6duCnSaJ9Y_7Oppn-c95iVhoXOkW7c9yNukegHUY3aVKHQ3hxQTBvqclgf6K_Wf6M3UQ51pnavvaoReUhdCWtJvLGfkJLqx4Ie_-ym5-_b1dvuDXffff26vrpkH0y0smraDEEVUouPIOx60aINoUCIfBhXRDd6b1hvpARo9DFo79DDoNqrgwMhTcnH01lc8HbAsdpeKx3F0E86HYutvQV2taip6_h_6OB_yVG9nAXRnVGP0KhRHyue5lIzR7nPaufxSVXZtwB4bsLUBuzZgRc3AMVMqO91j_md-PfQHUe6GCg</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>Liu, Laijun</creator><creator>Huang, Yanmin</creator><creator>Li, Yunhua</creator><creator>Shi, Danping</creator><creator>Zheng, Shaoying</creator><creator>Wu, Shuangshuang</creator><creator>Fang, Liang</creator><creator>Hu, Changzheng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope></search><sort><creationdate>20120301</creationdate><title>Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives</title><author>Liu, Laijun ; Huang, Yanmin ; Li, Yunhua ; Shi, Danping ; Zheng, Shaoying ; Wu, Shuangshuang ; Fang, Liang ; Hu, Changzheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c279t-f7892df1f4190e090d518d16e3e0bb4feabcc78c73c2265bb55aec2b58f4da273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Additives</topic><topic>ALUMINUM OXIDE</topic><topic>Barriers</topic><topic>CERAMICS</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>COPPER OXIDE</topic><topic>Crystallography and Scattering Methods</topic><topic>Dielectric breakdown</topic><topic>Dielectric properties</topic><topic>DOPING</topic><topic>Grain boundaries</topic><topic>Grain growth</topic><topic>INSULATION (ELECTRICAL)</topic><topic>Materials Science</topic><topic>NICKEL OXIDE</topic><topic>Nickel oxides</topic><topic>OXIDES</topic><topic>Polymer Sciences</topic><topic>PROPERTIES</topic><topic>SEMICONDUCTORS</topic><topic>SILICON DIOXIDE</topic><topic>Sintering aids</topic><topic>Solid Mechanics</topic><topic>Tin dioxide</topic><topic>Tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Laijun</creatorcontrib><creatorcontrib>Huang, Yanmin</creatorcontrib><creatorcontrib>Li, Yunhua</creatorcontrib><creatorcontrib>Shi, Danping</creatorcontrib><creatorcontrib>Zheng, Shaoying</creatorcontrib><creatorcontrib>Wu, Shuangshuang</creatorcontrib><creatorcontrib>Fang, Liang</creatorcontrib><creatorcontrib>Hu, Changzheng</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Laijun</au><au>Huang, Yanmin</au><au>Li, Yunhua</au><au>Shi, Danping</au><au>Zheng, Shaoying</au><au>Wu, Shuangshuang</au><au>Fang, Liang</au><au>Hu, Changzheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2012-03-01</date><risdate>2012</risdate><volume>47</volume><issue>5</issue><spage>2294</spage><epage>2299</epage><pages>2294-2299</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>In order to conciliate dielectric and non-Ohmic properties of CaCu
3
Ti
4
O
12
(CCTO) ceramics, NiO, SnO
2
, SiO
2
, and Al
2
O
3
were added as sintering aids to promote the grain growth of CCTO ceramics. Microstructure, dielectric properties, and non-Ohmic behavior of the CCTO ceramics were investigated. Among them, NiO-modified CCTO exhibits good dielectric and non-Ohmic properties (
ε
= 69833, tan
δ
= 0.073,
α
= 3.66 and
E
B
= 296.7 V/cm), due to NiO is also one of giant dielectric materials. Therefore, it is suitable for applying semiconductor circuits. The relationship between electrical current density (
J
) and electrical field (
E
) demonstrated that Schottky barrier should exist at grain boundaries. Non-linear coefficient
α
was directly proportional to the height of barrier. Depressing barrier width would improve significantly dielectric permittivity but decrease breakdown voltage.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10853-011-6043-1</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-2461 |
| ispartof | Journal of materials science, 2012-03, Vol.47 (5), p.2294-2299 |
| issn | 0022-2461 1573-4803 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1082222846 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Additives ALUMINUM OXIDE Barriers CERAMICS Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics COPPER OXIDE Crystallography and Scattering Methods Dielectric breakdown Dielectric properties DOPING Grain boundaries Grain growth INSULATION (ELECTRICAL) Materials Science NICKEL OXIDE Nickel oxides OXIDES Polymer Sciences PROPERTIES SEMICONDUCTORS SILICON DIOXIDE Sintering aids Solid Mechanics Tin dioxide Tin oxides |
| title | Dielectric and non-Ohmic properties of CaCu3Ti4O12 ceramics modified with NiO, SnO2, SiO2, and Al2O3 additives |
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