CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere

► We developed high temperature selenization of Cu–In–Ga precursor in H2Se with in situ anneal. ► We showed improved grain size and crystallinity of the CIGS absorber. ► We showed higher band gap and increase in Ga concentration at the surface of the absorber. ► We demonstrated Voc great than 600mV....

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Veröffentlicht in:	Solid-state electronics 2012-10, Vol.76, p.95-100
Hauptverfasser:	Liang, Haifan, Avachat, Upendra, Liu, Wei, van Duren, Jeroen, Le, Minh
Format:	Artikel
Sprache:	eng
Schlagworte:	Anneal ANNEALING PROCESSES Applied sciences CIGS Circuit properties Conversion Copper indium gallium selenides Crystallinity Electric, optical and optoelectronic circuits ELECTRONIC PRODUCTS Electronics ELEVATED TEMPERATURE Energy Exact sciences and technology Gallium Grain size GRAIN SIZE AND SHAPE High temperature selenization Instruments, apparatus, components and techniques common to several branches of physics and astronomy Integrated optoelectronics. Optoelectronic circuits Natural energy Optical and optoelectronic circuits Optoelectronic devices ORGANIC COMPOUNDS Photovoltaic conversion Physics Precursors Scanning probe microscopes, components and techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SOLAR CELLS Solar cells. Photoelectrochemical cells Solar energy THIN FILMS Voc Volatile organic compounds
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