Linking EUV lithography line edge roughness and 16ANBnm NAND memory performance

Resist roughness is one of the effects of process uncertainties in extreme UV lithography. All the lithographic elements, such as source, mask, optical system, resist and metrology, contribute to line roughness. As a result, line edge roughness is still a challenge to be tackled for 22 and 16 nm tra...

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Veröffentlicht in:	Microelectronic engineering 2012-10, Vol.98, p.24-28
Hauptverfasser:	Vaglio Pret, Alessandro, Poliakov, Pavel, Gronheid, Roel, Blomme, Pieter, Miranda Corbalan, Miguel, Dehaene, Wim, Verkest, Diederik, Van Houdt, Jan, Bianchi, Davide
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Density Devices Lithography Monte Carlo methods Resists Roughness Smoothing
Online-Zugang:	Volltext
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