Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors
► Modeling and simulation of a-IGZO TFTs using TCAD. ► Extraction of subgap DOS modeling parameters. ► Analysis for relationship between channel resistance and subgap DOS of a-IGZO TFTs. The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent pro...
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| Veröffentlicht in: | Solid-state electronics 2012-09, Vol.75, p.93-96 |
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| container_title | Solid-state electronics |
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| creator | Park, Suehye Cho, Edward Namkyu Yun, Ilgu |
| description | ► Modeling and simulation of a-IGZO TFTs using TCAD. ► Extraction of subgap DOS modeling parameters. ► Analysis for relationship between channel resistance and subgap DOS of a-IGZO TFTs.
The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μFE), and unit channel length resistance (rch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiNX, SiOX, and SiOX/SiNX. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μFE values due to the relatively large rch values. |
| doi_str_mv | 10.1016/j.sse.2012.04.029 |
| format | Article |
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The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μFE), and unit channel length resistance (rch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiNX, SiOX, and SiOX/SiNX. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μFE values due to the relatively large rch values.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2012.04.029</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Channel resistance ; Channels ; Density of states ; Electrical properties ; Electronics ; Exact sciences and technology ; Gates ; InGaZnO ; Insulators ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon dioxide ; Subgap density of states ; Testing, measurement, noise and reliability ; Thin film transistors ; Transistors</subject><ispartof>Solid-state electronics, 2012-09, Vol.75, p.93-96</ispartof><rights>2012 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-d54f02536abd664dec00389602d8b1db6365a0d49b1f9568684b7791dc6d19d83</citedby><cites>FETCH-LOGICAL-c360t-d54f02536abd664dec00389602d8b1db6365a0d49b1f9568684b7791dc6d19d83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sse.2012.04.029$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26132080$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Suehye</creatorcontrib><creatorcontrib>Cho, Edward Namkyu</creatorcontrib><creatorcontrib>Yun, Ilgu</creatorcontrib><title>Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors</title><title>Solid-state electronics</title><description>► Modeling and simulation of a-IGZO TFTs using TCAD. ► Extraction of subgap DOS modeling parameters. ► Analysis for relationship between channel resistance and subgap DOS of a-IGZO TFTs.
The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μFE), and unit channel length resistance (rch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiNX, SiOX, and SiOX/SiNX. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μFE values due to the relatively large rch values.</description><subject>Applied sciences</subject><subject>Channel resistance</subject><subject>Channels</subject><subject>Density of states</subject><subject>Electrical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>InGaZnO</subject><subject>Insulators</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon dioxide</subject><subject>Subgap density of states</subject><subject>Testing, measurement, noise and reliability</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kEFr3DAQhUVJoZs0P6A3XQq92BnJttampxLSZCGQS3rJRcjSOKvFK7sabULu_eGVsyHHgGAk5s3TvI-xbwJKAUJd7EoiLCUIWUJdguw-sZVo110ha2hO2AqgaguRpV_YKdEOAKQSsGL_NuEJKflHk_wUeD5pizzi-PqmrZ95j-kZMXC7NSHgmJvkKZlgkZvgOB36RzNzh4F8euHTwHMzIS03s5_ivJ0OxDfh2jyEu-zuAx_8uOcpmrAYTZG-ss-DGQnP3-oZ-_P76v7ypri9u95c_rotbKUgFa6pB5BNpUzvlKod2iVVp0C6theuV5VqDLi668XQNapVbd2v151wVjnRubY6Yz-OvnOc_h5ybL33ZHEcTcC8pBbQSimqrlZZKo5SGyeiiIOeo9-b-JJFeiGudzoT1wtxDbXOxPPM9zd7Q9aMQw5oPb0PZuCVhBay7udRhznrk8eoyXrMPJ2PaJN2k__gl__KxZhm</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Park, Suehye</creator><creator>Cho, Edward Namkyu</creator><creator>Yun, Ilgu</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20120901</creationdate><title>Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors</title><author>Park, Suehye ; Cho, Edward Namkyu ; Yun, Ilgu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-d54f02536abd664dec00389602d8b1db6365a0d49b1f9568684b7791dc6d19d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Channel resistance</topic><topic>Channels</topic><topic>Density of states</topic><topic>Electrical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>InGaZnO</topic><topic>Insulators</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon dioxide</topic><topic>Subgap density of states</topic><topic>Testing, measurement, noise and reliability</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Suehye</creatorcontrib><creatorcontrib>Cho, Edward Namkyu</creatorcontrib><creatorcontrib>Yun, Ilgu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Suehye</au><au>Cho, Edward Namkyu</au><au>Yun, Ilgu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors</atitle><jtitle>Solid-state electronics</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>75</volume><spage>93</spage><epage>96</epage><pages>93-96</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>► Modeling and simulation of a-IGZO TFTs using TCAD. ► Extraction of subgap DOS modeling parameters. ► Analysis for relationship between channel resistance and subgap DOS of a-IGZO TFTs.
The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μFE), and unit channel length resistance (rch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiNX, SiOX, and SiOX/SiNX. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μFE values due to the relatively large rch values.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2012.04.029</doi><tpages>4</tpages></addata></record> |
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| ispartof | Solid-state electronics, 2012-09, Vol.75, p.93-96 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Channel resistance Channels Density of states Electrical properties Electronics Exact sciences and technology Gates InGaZnO Insulators Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon dioxide Subgap density of states Testing, measurement, noise and reliability Thin film transistors Transistors |
| title | Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors |
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