An AFM/EFM Study of the Grain Boundary in ZnO-Based Varistor Materials
Zinc oxide (ZnO)‐based varistors are metal oxide varistors whose nonlinear properties are characterized by electrical resistance that decreases as the applied field increases. The multiphasic nature of varistors leads to the formation of Schottky barriers, which are responsible for the materials...
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Veröffentlicht in: | Journal of the American Ceramic Society 2008-11, Vol.91 (11), p.3593-3598 |
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creator | Gheno, Simoni M. Kiminami, Ruth H. G. A. Morelli, Márcio M. Bellini, Jusmar V. Paulin Filho, Pedro I. |
description | Zinc oxide (ZnO)‐based varistors are metal oxide varistors whose nonlinear properties are characterized by electrical resistance that decreases as the applied field increases. The multiphasic nature of varistors leads to the formation of Schottky barriers, which are responsible for the materials' nonlinear behavior. The objective of this work was to image the potential barriers in ZnO doped with 0.5 mol% Cu and x wt% G (G is a frit and x=0, 1, and 5 wt%). The frit served to form a glassy insulating layer around the grain boundaries. Samples were sintered at 1050°C and the microstructures were analyzed using a Nanoscope IIIa atomic force microscope. The results of the electric force microscopy experiments map the electric field distribution on the surface of CuO–ZnO‐based ceramics. |
doi_str_mv | 10.1111/j.1551-2916.2008.02704.x |
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G. A. ; Morelli, Márcio M. ; Bellini, Jusmar V. ; Paulin Filho, Pedro I.</creator><creatorcontrib>Gheno, Simoni M. ; Kiminami, Ruth H. G. A. ; Morelli, Márcio M. ; Bellini, Jusmar V. ; Paulin Filho, Pedro I.</creatorcontrib><description>Zinc oxide (ZnO)‐based varistors are metal oxide varistors whose nonlinear properties are characterized by electrical resistance that decreases as the applied field increases. The multiphasic nature of varistors leads to the formation of Schottky barriers, which are responsible for the materials' nonlinear behavior. The objective of this work was to image the potential barriers in ZnO doped with 0.5 mol% Cu and x wt% G (G is a frit and x=0, 1, and 5 wt%). The frit served to form a glassy insulating layer around the grain boundaries. Samples were sintered at 1050°C and the microstructures were analyzed using a Nanoscope IIIa atomic force microscope. The results of the electric force microscopy experiments map the electric field distribution on the surface of CuO–ZnO‐based ceramics.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.2008.02704.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Malden, USA: Blackwell Publishing Inc</publisher><subject>Applied sciences ; BOUNDARIES ; Building materials. Ceramics. Glasses ; Ceramic industries ; Ceramic sintering ; Ceramics ; Chemical industry and chemicals ; Conductors, resistors (including thermistors, varistors, and photoresistors) ; COPPER OXIDE ; Crystal structure ; Electronic devices ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; ELECTRONIC PRODUCTS ; Electronics ; Electrotechnical and electronic ceramics ; Exact sciences and technology ; Frit ; GRAIN BOUNDARIES ; Materials science ; Microscopy ; MICROSTRUCTURES ; Nanostructure ; Nonlinearity ; Technical ceramics ; Varistors ; ZINC OXIDE ; Zinc oxides</subject><ispartof>Journal of the American Ceramic Society, 2008-11, Vol.91 (11), p.3593-3598</ispartof><rights>2008 The American Ceramic Society</rights><rights>2009 INIST-CNRS</rights><rights>Copyright American Ceramic Society Nov 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5094-5229fbdd1d1d5e9610e97b953536da871b7078f3c7298ed6841a795966ba40053</citedby><cites>FETCH-LOGICAL-c5094-5229fbdd1d1d5e9610e97b953536da871b7078f3c7298ed6841a795966ba40053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fj.1551-2916.2008.02704.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20904624$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gheno, Simoni M.</creatorcontrib><creatorcontrib>Kiminami, Ruth H. G. A.</creatorcontrib><creatorcontrib>Morelli, Márcio M.</creatorcontrib><creatorcontrib>Bellini, Jusmar V.</creatorcontrib><creatorcontrib>Paulin Filho, Pedro I.</creatorcontrib><title>An AFM/EFM Study of the Grain Boundary in ZnO-Based Varistor Materials</title><title>Journal of the American Ceramic Society</title><description>Zinc oxide (ZnO)‐based varistors are metal oxide varistors whose nonlinear properties are characterized by electrical resistance that decreases as the applied field increases. The multiphasic nature of varistors leads to the formation of Schottky barriers, which are responsible for the materials' nonlinear behavior. The objective of this work was to image the potential barriers in ZnO doped with 0.5 mol% Cu and x wt% G (G is a frit and x=0, 1, and 5 wt%). The frit served to form a glassy insulating layer around the grain boundaries. Samples were sintered at 1050°C and the microstructures were analyzed using a Nanoscope IIIa atomic force microscope. The results of the electric force microscopy experiments map the electric field distribution on the surface of CuO–ZnO‐based ceramics.</description><subject>Applied sciences</subject><subject>BOUNDARIES</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Ceramic industries</subject><subject>Ceramic sintering</subject><subject>Ceramics</subject><subject>Chemical industry and chemicals</subject><subject>Conductors, resistors (including thermistors, varistors, and photoresistors)</subject><subject>COPPER OXIDE</subject><subject>Crystal structure</subject><subject>Electronic devices</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>ELECTRONIC PRODUCTS</subject><subject>Electronics</subject><subject>Electrotechnical and electronic ceramics</subject><subject>Exact sciences and technology</subject><subject>Frit</subject><subject>GRAIN BOUNDARIES</subject><subject>Materials science</subject><subject>Microscopy</subject><subject>MICROSTRUCTURES</subject><subject>Nanostructure</subject><subject>Nonlinearity</subject><subject>Technical ceramics</subject><subject>Varistors</subject><subject>ZINC OXIDE</subject><subject>Zinc oxides</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNkF1r2zAUhsVYYVnb_yAGg93YPfqWrkYakmyjbgdtN-iNUGyZOXPtVrJZ8u8nNyUXu5p0oSP0ngedByFMICdpXWxzIgTJqCEypwA6B6qA57s3aHZ8eItmAEAzpSm8Q-9j3KYrMZrP0Gre4fmquFiuCnw7jNUe9zUefnm8Dq7p8GU_dpULe5zqh-4mu3TRV_iHC00c-oALN_jQuDaeoZM6Hf789TxF96vl3eJLdnWz_rqYX2WlAMMzQampN1VF0hbeSALeqI0RTDBZOa3IRoHSNSsVNdpXUnPilBFGyo3jAIKdok8H7lPon0cfB_vYxNK3ret8P0ZLQFOaRuMyRT_8E932Y-jS7ywlynBmxMTTh1AZ-hiDr-1TaB7TwIlkJ792ayeNdtJoJ7_2xa_dpdaPr3wXS9fWwXVlE4_9FAxwSXnKfT7k_jSt3_83336bL5YvdSJkB0KS7ndHggu_rVRMCfvzem2_F9dsUTBuH9hf1GmY9A</recordid><startdate>200811</startdate><enddate>200811</enddate><creator>Gheno, Simoni M.</creator><creator>Kiminami, Ruth H. 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A. ; Morelli, Márcio M. ; Bellini, Jusmar V. ; Paulin Filho, Pedro I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5094-5229fbdd1d1d5e9610e97b953536da871b7078f3c7298ed6841a795966ba40053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>BOUNDARIES</topic><topic>Building materials. Ceramics. Glasses</topic><topic>Ceramic industries</topic><topic>Ceramic sintering</topic><topic>Ceramics</topic><topic>Chemical industry and chemicals</topic><topic>Conductors, resistors (including thermistors, varistors, and photoresistors)</topic><topic>COPPER OXIDE</topic><topic>Crystal structure</topic><topic>Electronic devices</topic><topic>Electronic equipment and fabrication. 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A.</creatorcontrib><creatorcontrib>Morelli, Márcio M.</creatorcontrib><creatorcontrib>Bellini, Jusmar V.</creatorcontrib><creatorcontrib>Paulin Filho, Pedro I.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Copper Technical Reference Library</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gheno, Simoni M.</au><au>Kiminami, Ruth H. G. A.</au><au>Morelli, Márcio M.</au><au>Bellini, Jusmar V.</au><au>Paulin Filho, Pedro I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An AFM/EFM Study of the Grain Boundary in ZnO-Based Varistor Materials</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2008-11</date><risdate>2008</risdate><volume>91</volume><issue>11</issue><spage>3593</spage><epage>3598</epage><pages>3593-3598</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>Zinc oxide (ZnO)‐based varistors are metal oxide varistors whose nonlinear properties are characterized by electrical resistance that decreases as the applied field increases. The multiphasic nature of varistors leads to the formation of Schottky barriers, which are responsible for the materials' nonlinear behavior. The objective of this work was to image the potential barriers in ZnO doped with 0.5 mol% Cu and x wt% G (G is a frit and x=0, 1, and 5 wt%). The frit served to form a glassy insulating layer around the grain boundaries. Samples were sintered at 1050°C and the microstructures were analyzed using a Nanoscope IIIa atomic force microscope. The results of the electric force microscopy experiments map the electric field distribution on the surface of CuO–ZnO‐based ceramics.</abstract><cop>Malden, USA</cop><pub>Blackwell Publishing Inc</pub><doi>10.1111/j.1551-2916.2008.02704.x</doi><tpages>6</tpages></addata></record> |
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subjects | Applied sciences BOUNDARIES Building materials. Ceramics. Glasses Ceramic industries Ceramic sintering Ceramics Chemical industry and chemicals Conductors, resistors (including thermistors, varistors, and photoresistors) COPPER OXIDE Crystal structure Electronic devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ELECTRONIC PRODUCTS Electronics Electrotechnical and electronic ceramics Exact sciences and technology Frit GRAIN BOUNDARIES Materials science Microscopy MICROSTRUCTURES Nanostructure Nonlinearity Technical ceramics Varistors ZINC OXIDE Zinc oxides |
title | An AFM/EFM Study of the Grain Boundary in ZnO-Based Varistor Materials |
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