Pd/native nitride/ n-GaAs structures as hydrogen sensors

In this study, a novel Pd/native nitride/ n-GaAs structure was developed and investigated as hydrogen sensor. Thin layers of native nitride on n-GaAs (1 0 0) epitaxial crystals was grown by anodic nitridation, and Pd thin layer as gate electrode was evaporated on the native nitride film in high vacu...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2008-03, Vol.130 (1), p.59-64
Hauptverfasser:	TASALTIN, N, DUMLUDAG, F, EBEOGLU, M, YUZER, H, OZTURK, Z
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodic nitridation Devices Electric potential Electrodes Hydrogen sensor MIS n-GaAs Native nitride Nitrides Palladium Sensors Thin films Volt-ampere characteristics
Online-Zugang:	Volltext
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