Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition

Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe 0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-02, Vol.19 (2), p.179-182
Hauptverfasser:	Iamraksa, P., Lloyd, N. S., Bagnall, D. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemical vapor deposition Chemistry and Materials Science Compound structure devices Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Fittings Integrated circuits Materials Materials Science Optical and Electronic Materials Optoelectronic devices Photodetectors Quantum dots Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Silicon germanides
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