Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films

Effect of O2, N2 and H2O to electrical behavior of tellurium-based films as well as cross-sensitivity to NO2 gas has been studied at temperatures between 20 and 70°C. The increase of oxygen partial pressure in N2+O2 carrier gas results in a nearly linear decreasing of the film resistance. The comple...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2007-02, Vol.121 (2), p.406-413
Hauptverfasser:	TSIULYANU, D, STRATAN, I, TSIULYANU, A, LIESS, H, EISELE, I
Format:	Artikel
Sprache:	eng
Schlagworte:	Actuators Chalcogenides Chemisorption Humidity Nitrogen dioxide Surface chemistry Thin films Vapour
Online-Zugang:	Volltext
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