Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain

Direct-gap gain up to 850 cm(-1) at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0 × 10(20) cm(-3). The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain,...

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Veröffentlicht in:	Physical review letters 2012-08, Vol.109 (5), p.057402-057402, Article 057402
Hauptverfasser:	Carroll, Lee, Friedli, Peter, Neuenschwander, Stefan, Sigg, Hans, Cecchi, Stefano, Isa, Fabio, Chrastina, Daniel, Isella, Giovanni, Fedoryshyn, Yuriy, Faist, Jérôme
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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