Polycrystalline silicon films fabricated by rapid thermal annealing
Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2012-07, Vol.23 (7), p.1279-1283 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Zhang, Lei Shen, Honglie You, Jiayi Jiang, Feng Wu, Tianru Tang, Zhengxia |
| description | Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of RTA parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that the crystallinity of the poly-Si films is increased with the increase of RTA temperature and duration. A sharp peak at about 520 cm
−1
is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s. |
| doi_str_mv | 10.1007/s10854-012-0786-6 |
| format | Article |
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−1
is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-012-0786-6</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Annealing ; Characterization and Evaluation of Materials ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Chemistry and Materials Science ; Chromium ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Crystallinity ; Electronics ; Exact sciences and technology ; Fullerenes and related materials ; Infrared and raman spectra and scattering ; Insertion ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Materials Science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical and Electronic Materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Physics ; Scanning probe microscopes, components and techniques ; Silicon films</subject><ispartof>Journal of materials science. Materials in electronics, 2012-07, Vol.23 (7), p.1279-1283</ispartof><rights>Springer Science+Business Media, LLC 2012</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-83a0ab265fa9f01615714caf9a66cab4932d11e8f3cc721a1257fae4c9a66dad3</citedby><cites>FETCH-LOGICAL-c416t-83a0ab265fa9f01615714caf9a66cab4932d11e8f3cc721a1257fae4c9a66dad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-012-0786-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-012-0786-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26122101$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Shen, Honglie</creatorcontrib><creatorcontrib>You, Jiayi</creatorcontrib><creatorcontrib>Jiang, Feng</creatorcontrib><creatorcontrib>Wu, Tianru</creatorcontrib><creatorcontrib>Tang, Zhengxia</creatorcontrib><title>Polycrystalline silicon films fabricated by rapid thermal annealing</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of RTA parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that the crystallinity of the poly-Si films is increased with the increase of RTA temperature and duration. A sharp peak at about 520 cm
−1
is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s.</description><subject>Annealing</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Chemistry and Materials Science</subject><subject>Chromium</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallinity</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials</subject><subject>Infrared and raman spectra and scattering</subject><subject>Insertion</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Materials Science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Physics</subject><subject>Scanning probe microscopes, components and techniques</subject><subject>Silicon films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kEtLxDAUhYMoOI7-AHcFEdxUc_NqZymDLxB0oeCu3KbJmCFtx6Sz6L83QwcRwdVd3O8cDh8h50CvgdLiJgItpcgpsJwWpcrVAZmBLHguSvZxSGZ0IYtcSMaOyUmMa0qpEryckeVr70cdxjig964zWXTe6b7LrPNtzCzWwWkcTJPVYxZw45ps-DShRZ9h1xlMmdUpObLooznb3zl5v797Wz7mzy8PT8vb51wLUENecqRYMyUtLiwFleaB0GgXqJTGWiw4awBMabnWBQMEJguLRugd0GDD5-Rq6t2E_mtr4lC1LmrjPXam38YKKC85FazkCb34g677bejSukQxSIakkImCidKhjzEYW22CazGMCap2WqtJa5W0VjutlUqZy30zRo3eBuy0iz9BpoAxoJA4NnExvbqVCb8X_Ff-DaaChxU</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Zhang, Lei</creator><creator>Shen, Honglie</creator><creator>You, Jiayi</creator><creator>Jiang, Feng</creator><creator>Wu, Tianru</creator><creator>Tang, Zhengxia</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20120701</creationdate><title>Polycrystalline silicon films fabricated by rapid thermal annealing</title><author>Zhang, Lei ; Shen, Honglie ; You, Jiayi ; Jiang, Feng ; Wu, Tianru ; Tang, Zhengxia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c416t-83a0ab265fa9f01615714caf9a66cab4932d11e8f3cc721a1257fae4c9a66dad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Chemistry and Materials Science</topic><topic>Chromium</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallinity</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials</topic><topic>Infrared and raman spectra and scattering</topic><topic>Insertion</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Materials Science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Physics</topic><topic>Scanning probe microscopes, components and techniques</topic><topic>Silicon films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Shen, Honglie</creatorcontrib><creatorcontrib>You, Jiayi</creatorcontrib><creatorcontrib>Jiang, Feng</creatorcontrib><creatorcontrib>Wu, Tianru</creatorcontrib><creatorcontrib>Tang, Zhengxia</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Lei</au><au>Shen, Honglie</au><au>You, Jiayi</au><au>Jiang, Feng</au><au>Wu, Tianru</au><au>Tang, Zhengxia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polycrystalline silicon films fabricated by rapid thermal annealing</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2012-07-01</date><risdate>2012</risdate><volume>23</volume><issue>7</issue><spage>1279</spage><epage>1283</epage><pages>1279-1283</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of RTA parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that the crystallinity of the poly-Si films is increased with the increase of RTA temperature and duration. A sharp peak at about 520 cm
−1
is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-012-0786-6</doi><tpages>5</tpages></addata></record> |
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| subjects | Annealing Characterization and Evaluation of Materials Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Chromium Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystallinity Electronics Exact sciences and technology Fullerenes and related materials Infrared and raman spectra and scattering Insertion Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Scanning probe microscopes, components and techniques Silicon films |
| title | Polycrystalline silicon films fabricated by rapid thermal annealing |
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