Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method
► Cu2ZnSn(S,Se)4 (CZTSSe) films have been firstly deposited by pulsed laser deposition (PLD) using one-step process. ► Transmission spectra demonstrate that the band gaps of CZTSSe films are higher than those of CZTSSe bulks. ► The internal compressive stress and the deficiency of Cu content in the...
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| Veröffentlicht in: | Journal of alloys and compounds 2012-07, Vol.529, p.34-37 |
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| creator | He, Jun Sun, Lin Ding, Nuofan Kong, Hui Zuo, Shaohua Chen, Shiyou Chen, Ye Yang, Pingxiong Chu, Junhao |
| description | ► Cu2ZnSn(S,Se)4 (CZTSSe) films have been firstly deposited by pulsed laser deposition (PLD) using one-step process. ► Transmission spectra demonstrate that the band gaps of CZTSSe films are higher than those of CZTSSe bulks. ► The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe films.
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been firstly deposited on heating quartz substrates by pulsed laser deposition (PLD) method using one-step process. The results of energy dispersive X-ray (EDX) spectroscopy show that there are some discrepancies of the elemental composition between targets and thin films. However, structural and optical properties of CZTSSe thin films show good tolerance to the composition deviation from stoichiometry. Both X-ray diffraction (XRD) and Raman spectra analysis indicate the internal compressive stress exists in CZTSSe thin films. Further transmission spectra demonstrate that the band gaps of CZTSSe thin films are higher than those of CZTSSe bulks. The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe thin films. |
| doi_str_mv | 10.1016/j.jallcom.2012.03.065 |
| format | Article |
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Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been firstly deposited on heating quartz substrates by pulsed laser deposition (PLD) method using one-step process. The results of energy dispersive X-ray (EDX) spectroscopy show that there are some discrepancies of the elemental composition between targets and thin films. However, structural and optical properties of CZTSSe thin films show good tolerance to the composition deviation from stoichiometry. Both X-ray diffraction (XRD) and Raman spectra analysis indicate the internal compressive stress exists in CZTSSe thin films. Further transmission spectra demonstrate that the band gaps of CZTSSe thin films are higher than those of CZTSSe bulks. The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe thin films.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2012.03.065</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Composition ; Compressive properties ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cu2ZnSn(S,Se)4 ; Deposition ; Deviation ; Energy gaps (solid state) ; Exact sciences and technology ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Pulsed laser deposition ; Stresses ; Structure ; Thin films ; X-rays</subject><ispartof>Journal of alloys and compounds, 2012-07, Vol.529, p.34-37</ispartof><rights>2012 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-7165949931d30fa1f915d8f59e0f467e8916b809d920fae1b2c47cc2324a6ca93</citedby><cites>FETCH-LOGICAL-c368t-7165949931d30fa1f915d8f59e0f467e8916b809d920fae1b2c47cc2324a6ca93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2012.03.065$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25918074$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>He, Jun</creatorcontrib><creatorcontrib>Sun, Lin</creatorcontrib><creatorcontrib>Ding, Nuofan</creatorcontrib><creatorcontrib>Kong, Hui</creatorcontrib><creatorcontrib>Zuo, Shaohua</creatorcontrib><creatorcontrib>Chen, Shiyou</creatorcontrib><creatorcontrib>Chen, Ye</creatorcontrib><creatorcontrib>Yang, Pingxiong</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method</title><title>Journal of alloys and compounds</title><description>► Cu2ZnSn(S,Se)4 (CZTSSe) films have been firstly deposited by pulsed laser deposition (PLD) using one-step process. ► Transmission spectra demonstrate that the band gaps of CZTSSe films are higher than those of CZTSSe bulks. ► The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe films.
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been firstly deposited on heating quartz substrates by pulsed laser deposition (PLD) method using one-step process. The results of energy dispersive X-ray (EDX) spectroscopy show that there are some discrepancies of the elemental composition between targets and thin films. However, structural and optical properties of CZTSSe thin films show good tolerance to the composition deviation from stoichiometry. Both X-ray diffraction (XRD) and Raman spectra analysis indicate the internal compressive stress exists in CZTSSe thin films. Further transmission spectra demonstrate that the band gaps of CZTSSe thin films are higher than those of CZTSSe bulks. The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe thin films.</description><subject>Composition</subject><subject>Compressive properties</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cu2ZnSn(S,Se)4</subject><subject>Deposition</subject><subject>Deviation</subject><subject>Energy gaps (solid state)</subject><subject>Exact sciences and technology</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Optical properties of specific thin films</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Pulsed laser deposition</subject><subject>Stresses</subject><subject>Structure</subject><subject>Thin films</subject><subject>X-rays</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkMtuEzEUhkcIJELLIyDNBqksZvBl7LFXCEW0IFViEdiwsRz7mDjyeAbbQW2fgHUfkSfBUQJbVuf2ndvfNK8w6jHC_O2-3-sQzDz1BGHSI9ojzp40KyxG2g2cy6fNCknCOkGFeN68yHmPEMKS4lXzsPHxe4AuF1jaJcGiky5-jq2OtjW7GpkCyT-ckrNr1wfyLW7i1eZuA_j3r8e7N0Nbdj62zocptxaWOfsCtt3et8sh5OoFnSH9rRzHTFB2s71snjldgZdne9F8vf7wZf2xu_1882n9_rYzlIvSjZgzOch6raXIaewkZlY4JgG5gY8gJOZbgaSVpJYBb4kZRmMIJYPmRkt60Vyd5i5p_nGAXNTks4EQdIT5kBVGVBDO2MAqyk6oSXPOCZxakp90uq-QOmqt9uqstTpqrRBVVeva9_q8Qmejg0s6Gp__NRMmsUDjULl3Jw7qvz89JJWNh2jA-gSmKDv7_2z6A-0_mYs</recordid><startdate>20120715</startdate><enddate>20120715</enddate><creator>He, Jun</creator><creator>Sun, Lin</creator><creator>Ding, Nuofan</creator><creator>Kong, Hui</creator><creator>Zuo, Shaohua</creator><creator>Chen, Shiyou</creator><creator>Chen, Ye</creator><creator>Yang, Pingxiong</creator><creator>Chu, Junhao</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20120715</creationdate><title>Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method</title><author>He, Jun ; Sun, Lin ; Ding, Nuofan ; Kong, Hui ; Zuo, Shaohua ; Chen, Shiyou ; Chen, Ye ; Yang, Pingxiong ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-7165949931d30fa1f915d8f59e0f467e8916b809d920fae1b2c47cc2324a6ca93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Composition</topic><topic>Compressive properties</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cu2ZnSn(S,Se)4</topic><topic>Deposition</topic><topic>Deviation</topic><topic>Energy gaps (solid state)</topic><topic>Exact sciences and technology</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Optical properties of specific thin films</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Pulsed laser deposition</topic><topic>Stresses</topic><topic>Structure</topic><topic>Thin films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, Jun</creatorcontrib><creatorcontrib>Sun, Lin</creatorcontrib><creatorcontrib>Ding, Nuofan</creatorcontrib><creatorcontrib>Kong, Hui</creatorcontrib><creatorcontrib>Zuo, Shaohua</creatorcontrib><creatorcontrib>Chen, Shiyou</creatorcontrib><creatorcontrib>Chen, Ye</creatorcontrib><creatorcontrib>Yang, Pingxiong</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>He, Jun</au><au>Sun, Lin</au><au>Ding, Nuofan</au><au>Kong, Hui</au><au>Zuo, Shaohua</au><au>Chen, Shiyou</au><au>Chen, Ye</au><au>Yang, Pingxiong</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2012-07-15</date><risdate>2012</risdate><volume>529</volume><spage>34</spage><epage>37</epage><pages>34-37</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► Cu2ZnSn(S,Se)4 (CZTSSe) films have been firstly deposited by pulsed laser deposition (PLD) using one-step process. ► Transmission spectra demonstrate that the band gaps of CZTSSe films are higher than those of CZTSSe bulks. ► The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe films.
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been firstly deposited on heating quartz substrates by pulsed laser deposition (PLD) method using one-step process. The results of energy dispersive X-ray (EDX) spectroscopy show that there are some discrepancies of the elemental composition between targets and thin films. However, structural and optical properties of CZTSSe thin films show good tolerance to the composition deviation from stoichiometry. Both X-ray diffraction (XRD) and Raman spectra analysis indicate the internal compressive stress exists in CZTSSe thin films. Further transmission spectra demonstrate that the band gaps of CZTSSe thin films are higher than those of CZTSSe bulks. The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe thin films.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2012.03.065</doi><tpages>4</tpages></addata></record> |
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| subjects | Composition Compressive properties Condensed matter: electronic structure, electrical, magnetic, and optical properties Cu2ZnSn(S,Se)4 Deposition Deviation Energy gaps (solid state) Exact sciences and technology Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optical properties of specific thin films Other semiconductors Physics Pulsed laser deposition Stresses Structure Thin films X-rays |
| title | Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method |
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