AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0001) substrates, as indicated by Raman scattering spectroscopy. I...

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Veröffentlicht in:	Journal of crystal growth 2012-07, Vol.350 (1), p.69-71
Hauptverfasser:	Nomura, Takuya, Okumura, Kenta, Miyake, Hideto, Hiramatsu, Kazumasa, Eryu, Osamu, Yamada, Yoichi
Format:	Artikel
Sprache:	eng
Schlagworte:	A2. Homoepitaxial growth A3. HVPE Aluminum nitride B1. AlN Condensed matter: structure, mechanical and thermal properties Cracks Cross-disciplinary physics: materials science rheology Crystal growth Diffraction Exact sciences and technology Growth from vapor Impurities Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Secondary ion mass spectrometry Silicon substrates Structure of solids and liquids crystallography Structure of specific crystalline solids Tensile stress Vapor phase epitaxy growth from vapor phase
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