Structural and local electrical properties of AlInN/AlN/GaN heterostructures

GaN layers and Al1−xInxN/AlN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations (TDs), originating from the GaN (0001) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy (C-AFM) TDs have been found to be highly cond...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (15), p.2838-2840
Hauptverfasser:	Minj, A., Cavalcoli, D., Cavallini, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Al1−xInxN/AlN/GaN heterostructures Aluminum nitride Atomic Force Microscopy Condensed matter Condensed matter: structure, mechanical and thermal properties Current-AFM Electrical properties Exact sciences and technology Gallium nitrides Heterostructures In segregation Indium Local conductivity Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Segregations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Threading dislocations V-defects
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