Amorphous indiumagalliumazinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model
We have successfully fabricated large sized amorphous indiumagalliumazinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium lay...
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| Veröffentlicht in: | Solid-state electronics 2012-07, Vol.73, p.74-77 |
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| creator | Shih, Tsung-Hsiang Fang, Shou-Wei Lee, Jen-Yu Lin, Guan-Yu Chen, Yu-Hung Hsin, Lung-Pao Li, Hsin-Hung Yang, Chin-Wei Chen, Chien-Tao Lu, Hsiung-Hsing Cheng, Kai-Chung Lin, Chih-Yuan Chen, Chia-Yu Yang, Chun-Ming Tsai, He-Ting Lin, Yu-Hsin |
| description | We have successfully fabricated large sized amorphous indiumagalliumazinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than A-0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indiumagalliumazinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model. |
| doi_str_mv | 10.1016/j.sse.2012.04.001 |
| format | Article |
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| ispartof | Solid-state electronics, 2012-07, Vol.73, p.74-77 |
| issn | 0038-1101 |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Devices Displays Electronics Instability Mathematical models Stability Thin films Titanium Titanium oxides |
| title | Amorphous indiumagalliumazinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model |
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