A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs
► The paper describes the switching system. ► The system is based on a low cost commercially available microcontroller. ► It enables the successive applying of MG and CP techniques. A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables...
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Veröffentlicht in: | Measurement : journal of the International Measurement Confederation 2012-08, Vol.45 (7), p.1922-1926 |
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container_title | Measurement : journal of the International Measurement Confederation |
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creator | Vasovic, Nikola D Ristic, Goran S |
description | ► The paper describes the switching system. ► The system is based on a low cost commercially available microcontroller. ► It enables the successive applying of MG and CP techniques.
A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables the successive measuring of both the electrical characteristics in midgap-subthreshold technique (MGT) and charge-pumping currents in charge-pumping technique (CPT) of metal–oxide–semiconductor field effect transistor (MOSFET), has been developed. The APL-SM v1.0 system, instead of expensive switching matrix which price is considerably higher, could be used for the switching from MGT to CPT and vice versa. Using the appropriate program, the system allows the monitoring of MOSFETs during long time periods, helping the performing of long lasting experiments. The good agreement in the electrical characteristics, as well as in the charge-pumping currents, obtained using ultra low current, high speed Keithley switching matrix (SM) and APL-SM system, was obtained. |
doi_str_mv | 10.1016/j.measurement.2012.03.011 |
format | Article |
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A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables the successive measuring of both the electrical characteristics in midgap-subthreshold technique (MGT) and charge-pumping currents in charge-pumping technique (CPT) of metal–oxide–semiconductor field effect transistor (MOSFET), has been developed. The APL-SM v1.0 system, instead of expensive switching matrix which price is considerably higher, could be used for the switching from MGT to CPT and vice versa. Using the appropriate program, the system allows the monitoring of MOSFETs during long time periods, helping the performing of long lasting experiments. The good agreement in the electrical characteristics, as well as in the charge-pumping currents, obtained using ultra low current, high speed Keithley switching matrix (SM) and APL-SM system, was obtained.</description><identifier>ISSN: 0263-2241</identifier><identifier>EISSN: 1873-412X</identifier><identifier>DOI: 10.1016/j.measurement.2012.03.011</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Charge-pumping technique ; Gate oxide charge ; High speed ; Interface traps ; Low cost ; Low currents ; Microcontroller ; Microcontrollers ; Midgap-subthreshold technique ; Monitoring ; MOSFETs ; Switching ; Vices</subject><ispartof>Measurement : journal of the International Measurement Confederation, 2012-08, Vol.45 (7), p.1922-1926</ispartof><rights>2012 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-5c714c30185b9001b75972f52f749dc7b497d9fa92930e5214023bc45400bddf3</citedby><cites>FETCH-LOGICAL-c354t-5c714c30185b9001b75972f52f749dc7b497d9fa92930e5214023bc45400bddf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0263224112001315$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Vasovic, Nikola D</creatorcontrib><creatorcontrib>Ristic, Goran S</creatorcontrib><title>A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs</title><title>Measurement : journal of the International Measurement Confederation</title><description>► The paper describes the switching system. ► The system is based on a low cost commercially available microcontroller. ► It enables the successive applying of MG and CP techniques.
A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables the successive measuring of both the electrical characteristics in midgap-subthreshold technique (MGT) and charge-pumping currents in charge-pumping technique (CPT) of metal–oxide–semiconductor field effect transistor (MOSFET), has been developed. The APL-SM v1.0 system, instead of expensive switching matrix which price is considerably higher, could be used for the switching from MGT to CPT and vice versa. Using the appropriate program, the system allows the monitoring of MOSFETs during long time periods, helping the performing of long lasting experiments. The good agreement in the electrical characteristics, as well as in the charge-pumping currents, obtained using ultra low current, high speed Keithley switching matrix (SM) and APL-SM system, was obtained.</description><subject>Charge-pumping technique</subject><subject>Gate oxide charge</subject><subject>High speed</subject><subject>Interface traps</subject><subject>Low cost</subject><subject>Low currents</subject><subject>Microcontroller</subject><subject>Microcontrollers</subject><subject>Midgap-subthreshold technique</subject><subject>Monitoring</subject><subject>MOSFETs</subject><subject>Switching</subject><subject>Vices</subject><issn>0263-2241</issn><issn>1873-412X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLw0AUhQdRsD7-w7hzk3jnkaSzlOILWhSs4EaGZHKjU5JMnZsq_fem1IVLVxcu5ztwPsYuBKQCRH61SjssaROxw35IJQiZgkpBiAM2EdNCJVrI10M2AZmrREotjtkJ0QoAcmXyCXu75vTtB_fh-3dOWxqw41VJWPPQ8867GFzohxjaFiNvQuS0cQ6J_Bfycr1utzsuNHxxt-RlX_PZ03JHLh6fb2-WdMaOmrIlPP-9p-xlfM_uk_nj3cPsep44lekhyVwhtFMgplllAERVZKaQTSabQpvaFZU2RW2a0kijADMpNEhVOZ1pgKquG3XKLve96xg-N0iD7Tw5bNuyx7AhK0BNpTZGmDFq9tFxGlHExq6j78q4HUN2p9Su7B-ldqfUgrKj0pGd7Vkct3x5jJacx95h7SO6wdbB_6PlBy9ehOI</recordid><startdate>201208</startdate><enddate>201208</enddate><creator>Vasovic, Nikola D</creator><creator>Ristic, Goran S</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope></search><sort><creationdate>201208</creationdate><title>A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs</title><author>Vasovic, Nikola D ; Ristic, Goran S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-5c714c30185b9001b75972f52f749dc7b497d9fa92930e5214023bc45400bddf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Charge-pumping technique</topic><topic>Gate oxide charge</topic><topic>High speed</topic><topic>Interface traps</topic><topic>Low cost</topic><topic>Low currents</topic><topic>Microcontroller</topic><topic>Microcontrollers</topic><topic>Midgap-subthreshold technique</topic><topic>Monitoring</topic><topic>MOSFETs</topic><topic>Switching</topic><topic>Vices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vasovic, Nikola D</creatorcontrib><creatorcontrib>Ristic, Goran S</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><jtitle>Measurement : journal of the International Measurement Confederation</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vasovic, Nikola D</au><au>Ristic, Goran S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs</atitle><jtitle>Measurement : journal of the International Measurement Confederation</jtitle><date>2012-08</date><risdate>2012</risdate><volume>45</volume><issue>7</issue><spage>1922</spage><epage>1926</epage><pages>1922-1926</pages><issn>0263-2241</issn><eissn>1873-412X</eissn><abstract>► The paper describes the switching system. ► The system is based on a low cost commercially available microcontroller. ► It enables the successive applying of MG and CP techniques.
A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables the successive measuring of both the electrical characteristics in midgap-subthreshold technique (MGT) and charge-pumping currents in charge-pumping technique (CPT) of metal–oxide–semiconductor field effect transistor (MOSFET), has been developed. The APL-SM v1.0 system, instead of expensive switching matrix which price is considerably higher, could be used for the switching from MGT to CPT and vice versa. Using the appropriate program, the system allows the monitoring of MOSFETs during long time periods, helping the performing of long lasting experiments. The good agreement in the electrical characteristics, as well as in the charge-pumping currents, obtained using ultra low current, high speed Keithley switching matrix (SM) and APL-SM system, was obtained.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.measurement.2012.03.011</doi><tpages>5</tpages></addata></record> |
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subjects | Charge-pumping technique Gate oxide charge High speed Interface traps Low cost Low currents Microcontroller Microcontrollers Midgap-subthreshold technique Monitoring MOSFETs Switching Vices |
title | A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs |
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