Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

► Electron energy relaxation in AlGaN/AlN/GaN heterostructures has been investigated. ► Shubnikov-de Haas and Hall Effect were used for experimental techniques. ► Energy relaxation is due to acoustic phonon emission via piezoelectric interaction. ► Hot electrons relax spontaneously with MHz to THz e...

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Veröffentlicht in:	Superlattices and microstructures 2012-06, Vol.51 (6), p.733-744
Hauptverfasser:	Tiras, Engin, Celik, Ozlem, Mutlu, Selman, Ardali, Sukru, Lisesivdin, Sefer Bora, Ozbay, Ekmel
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Electron energy relaxation Electron temperature Emission Gallium nitrides GaN heterostructure Hall mobility Heterostructures Phonon emission Power loss Semiconductors Shubnikov-de Haas Two dimensional
Online-Zugang:	Volltext
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