Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
► Electron energy relaxation in AlGaN/AlN/GaN heterostructures has been investigated. ► Shubnikov-de Haas and Hall Effect were used for experimental techniques. ► Energy relaxation is due to acoustic phonon emission via piezoelectric interaction. ► Hot electrons relax spontaneously with MHz to THz e...
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| Veröffentlicht in: | Superlattices and microstructures 2012-06, Vol.51 (6), p.733-744 |
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| container_title | Superlattices and microstructures |
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| creator | Tiras, Engin Celik, Ozlem Mutlu, Selman Ardali, Sukru Lisesivdin, Sefer Bora Ozbay, Ekmel |
| description | ► Electron energy relaxation in AlGaN/AlN/GaN heterostructures has been investigated. ► Shubnikov-de Haas and Hall Effect were used for experimental techniques. ► Energy relaxation is due to acoustic phonon emission via piezoelectric interaction. ► Hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.
The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range Te>100K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al0.25Ga0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. |
| doi_str_mv | 10.1016/j.spmi.2012.03.029 |
| format | Article |
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The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range Te>100K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al0.25Ga0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1016/j.spmi.2012.03.029</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Aluminum nitride ; Electron energy relaxation ; Electron temperature ; Emission ; Gallium nitrides ; GaN heterostructure ; Hall mobility ; Heterostructures ; Phonon emission ; Power loss ; Semiconductors ; Shubnikov-de Haas ; Two dimensional</subject><ispartof>Superlattices and microstructures, 2012-06, Vol.51 (6), p.733-744</ispartof><rights>2012 Elsevier Ltd</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-e2b1fd47996791498438ad7604ec8271805bbc8d18eba4888622f572a34603fe3</citedby><cites>FETCH-LOGICAL-c377t-e2b1fd47996791498438ad7604ec8271805bbc8d18eba4888622f572a34603fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.spmi.2012.03.029$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids></links><search><creatorcontrib>Tiras, Engin</creatorcontrib><creatorcontrib>Celik, Ozlem</creatorcontrib><creatorcontrib>Mutlu, Selman</creatorcontrib><creatorcontrib>Ardali, Sukru</creatorcontrib><creatorcontrib>Lisesivdin, Sefer Bora</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><title>Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures</title><title>Superlattices and microstructures</title><description>► Electron energy relaxation in AlGaN/AlN/GaN heterostructures has been investigated. ► Shubnikov-de Haas and Hall Effect were used for experimental techniques. ► Energy relaxation is due to acoustic phonon emission via piezoelectric interaction. ► Hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.
The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range Te>100K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al0.25Ga0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.</description><subject>Aluminum nitride</subject><subject>Electron energy relaxation</subject><subject>Electron temperature</subject><subject>Emission</subject><subject>Gallium nitrides</subject><subject>GaN heterostructure</subject><subject>Hall mobility</subject><subject>Heterostructures</subject><subject>Phonon emission</subject><subject>Power loss</subject><subject>Semiconductors</subject><subject>Shubnikov-de Haas</subject><subject>Two dimensional</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAYhC0EEqXwB5gysiT1V21HYqkqKEhVWcpsOc4bcJUvbBfRf4-jMjPdcne6exC6J7ggmIjFoQhj5wqKCS0wKzAtL9CM4FLkTEh5iWZY8jIXmIlrdBPCAWNcciJnaLeHbgRv4tFDVsMIfQ19zKAH_3HKPLTmx0Q39Fl0HWSuz1btxuwWq3a3SJp9QgQ_hOiPdmoIt-iqMW2Auz-do_fnp_36Jd--bV7Xq21umZQxB1qRpuayLIUsCS8VZ8rUUmAOVlFJFF5WlVU1UVAZrpQSlDZLSQ3j6UMDbI4ezr2jH76OEKLuXLDQtqaH4Rg0wUxRrhhTyUrPVpuGBg-NHr3rjD8lk57g6YOe4OkJnsZMJ3gp9HgOQTrx7cDrYB30FmrnwUZdD-6_-C_yWXff</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Tiras, Engin</creator><creator>Celik, Ozlem</creator><creator>Mutlu, Selman</creator><creator>Ardali, Sukru</creator><creator>Lisesivdin, Sefer Bora</creator><creator>Ozbay, Ekmel</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201206</creationdate><title>Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures</title><author>Tiras, Engin ; Celik, Ozlem ; Mutlu, Selman ; Ardali, Sukru ; Lisesivdin, Sefer Bora ; Ozbay, Ekmel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-e2b1fd47996791498438ad7604ec8271805bbc8d18eba4888622f572a34603fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Aluminum nitride</topic><topic>Electron energy relaxation</topic><topic>Electron temperature</topic><topic>Emission</topic><topic>Gallium nitrides</topic><topic>GaN heterostructure</topic><topic>Hall mobility</topic><topic>Heterostructures</topic><topic>Phonon emission</topic><topic>Power loss</topic><topic>Semiconductors</topic><topic>Shubnikov-de Haas</topic><topic>Two dimensional</topic><toplevel>online_resources</toplevel><creatorcontrib>Tiras, Engin</creatorcontrib><creatorcontrib>Celik, Ozlem</creatorcontrib><creatorcontrib>Mutlu, Selman</creatorcontrib><creatorcontrib>Ardali, Sukru</creatorcontrib><creatorcontrib>Lisesivdin, Sefer Bora</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tiras, Engin</au><au>Celik, Ozlem</au><au>Mutlu, Selman</au><au>Ardali, Sukru</au><au>Lisesivdin, Sefer Bora</au><au>Ozbay, Ekmel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures</atitle><jtitle>Superlattices and microstructures</jtitle><date>2012-06</date><risdate>2012</risdate><volume>51</volume><issue>6</issue><spage>733</spage><epage>744</epage><pages>733-744</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><abstract>► Electron energy relaxation in AlGaN/AlN/GaN heterostructures has been investigated. ► Shubnikov-de Haas and Hall Effect were used for experimental techniques. ► Energy relaxation is due to acoustic phonon emission via piezoelectric interaction. ► Hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.
The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range Te>100K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al0.25Ga0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.spmi.2012.03.029</doi><tpages>12</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum nitride Electron energy relaxation Electron temperature Emission Gallium nitrides GaN heterostructure Hall mobility Heterostructures Phonon emission Power loss Semiconductors Shubnikov-de Haas Two dimensional |
| title | Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures |
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