Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

Nano-indentation measurements on freestanding GaN substrates clearly showed, for the first time, that the hardness of the GaN crystal can be controlled by changing the growth conditions for hydride vapor phase epitaxy (HVPE). The hardness of the GaN crystal is probably governed by heterogeneous nucl...

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Veröffentlicht in:	Journal of crystal growth 2012-07, Vol.350 (1), p.38-43
Hauptverfasser:	Fujikura, Hajime, Oshima, Yuichi, Megro, Takeshi, Saito, Toshiya
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A1. Defects A2. Growth from vapor A3. Hydride vapor phase epitaxy B1. Nitride B2. Semiconducting gallium compounds Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystals Defects and impurities in crystals microstructure Density Dislocations Exact sciences and technology Gallium nitrides Hardness Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Nanomaterials Nanostructure Physics Reduction Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Thin film structure and morphology Vapor phase epitaxy growth from vapor phase
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