Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN
The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as th...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (15), p.2964-2966 |
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| container_title | Physica. B, Condensed matter |
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| creator | Zainal, N. Novikov, S.V. Akimov, A.V. Staddon, C.R. Foxon, C.T. Kent, A.J. |
| description | The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50μm thick. The surface morphology of thick c-GaN is also presented. |
| doi_str_mv | 10.1016/j.physb.2011.08.088 |
| format | Article |
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A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50μm thick. The surface morphology of thick c-GaN is also presented.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2011.08.088</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>A defects ; Composition and phase identification ; Condensed matter ; Condensed matter: structure, mechanical and thermal properties ; Cubic GaN ; Diffraction ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Gallium nitrides ; Hexagonal GaN ; Inclusions ; Photoluminescence ; Physics ; Spectra ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thick cubic GaN ; Thin cubic GaN ; Thin film structure and morphology ; X-ray diffraction</subject><ispartof>Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2964-2966</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-370da30031d93870951145a36eaf8f116f4bb9b5c913961ae37a12df28b4ac9a3</citedby><cites>FETCH-LOGICAL-c366t-370da30031d93870951145a36eaf8f116f4bb9b5c913961ae37a12df28b4ac9a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2011.08.088$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26093336$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zainal, N.</creatorcontrib><creatorcontrib>Novikov, S.V.</creatorcontrib><creatorcontrib>Akimov, A.V.</creatorcontrib><creatorcontrib>Staddon, C.R.</creatorcontrib><creatorcontrib>Foxon, C.T.</creatorcontrib><creatorcontrib>Kent, A.J.</creatorcontrib><title>Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN</title><title>Physica. B, Condensed matter</title><description>The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50μm thick. The surface morphology of thick c-GaN is also presented.</description><subject>A defects</subject><subject>Composition and phase identification</subject><subject>Condensed matter</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cubic GaN</subject><subject>Diffraction</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Gallium nitrides</subject><subject>Hexagonal GaN</subject><subject>Inclusions</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Spectra</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thick cubic GaN</subject><subject>Thin cubic GaN</subject><subject>Thin film structure and morphology</subject><subject>X-ray diffraction</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LxDAQxYMouK5-Ai-9COuhNdNp0_TgQUR3FdGLnsM0TTVLt12T1n-f3qwrHh0eDAy_N8M8xo6BJ8BBnC2T9cunr5KUAyRcBskdNgFZYJwC5rtswssU4ixPxT478H7JQ0EBE3a7MB_03HfURrP30Q1fdjCn0ZzuI9vpdvS273xEQVFtGqOHMI70WFkdzb4CEVet6eqt45DtNdR6c_Tbp-zp-urxchHfPcxvLi_uYo1CDDEWvCbkHKEuURa8zAGynFAYamQDIJqsqsoq1yVgKYAMFgRp3aSyykiXhFM22-5du_51NH5QK-u1aVvqTD96BRxlmqGAIqC4RbXrvXemUWtnV-Q-A6Q2yaml-klObZJTXAbJ4Dr5PUBeU9s46rT1f9ZU8BIRReDOt5wJ375Z45TX1nTa1NaFqFTd23_vfAPXhYLu</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>Zainal, N.</creator><creator>Novikov, S.V.</creator><creator>Akimov, A.V.</creator><creator>Staddon, C.R.</creator><creator>Foxon, C.T.</creator><creator>Kent, A.J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120801</creationdate><title>Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN</title><author>Zainal, N. ; Novikov, S.V. ; Akimov, A.V. ; Staddon, C.R. ; Foxon, C.T. ; Kent, A.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-370da30031d93870951145a36eaf8f116f4bb9b5c913961ae37a12df28b4ac9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>A defects</topic><topic>Composition and phase identification</topic><topic>Condensed matter</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cubic GaN</topic><topic>Diffraction</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Gallium nitrides</topic><topic>Hexagonal GaN</topic><topic>Inclusions</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Spectra</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thick cubic GaN</topic><topic>Thin cubic GaN</topic><topic>Thin film structure and morphology</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zainal, N.</creatorcontrib><creatorcontrib>Novikov, S.V.</creatorcontrib><creatorcontrib>Akimov, A.V.</creatorcontrib><creatorcontrib>Staddon, C.R.</creatorcontrib><creatorcontrib>Foxon, C.T.</creatorcontrib><creatorcontrib>Kent, A.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zainal, N.</au><au>Novikov, S.V.</au><au>Akimov, A.V.</au><au>Staddon, C.R.</au><au>Foxon, C.T.</au><au>Kent, A.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2012-08-01</date><risdate>2012</risdate><volume>407</volume><issue>15</issue><spage>2964</spage><epage>2966</epage><pages>2964-2966</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50μm thick. The surface morphology of thick c-GaN is also presented.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2011.08.088</doi><tpages>3</tpages></addata></record> |
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| subjects | A defects Composition and phase identification Condensed matter Condensed matter: structure, mechanical and thermal properties Cubic GaN Diffraction Exact sciences and technology Gallium arsenide Gallium arsenides Gallium nitrides Hexagonal GaN Inclusions Photoluminescence Physics Spectra Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thick cubic GaN Thin cubic GaN Thin film structure and morphology X-ray diffraction |
| title | Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN |
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