Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge
In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500°C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% p...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (16), p.3248-3251 |
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| container_title | Physica. B, Condensed matter |
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| creator | Ramos-Rivera, L. Escobar, D. Benavides-Palacios, V. Arango, P.J. Restrepo-Parra, E. |
| description | In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500°C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25Pa and the discharge was performed at 310V. The TiC layer was grown in a methane atmosphere at 30Pa and 270V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400°C, TiO2 phase begun to appear and it was well observed at 500°C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases. |
| doi_str_mv | 10.1016/j.physb.2011.12.078 |
| format | Article |
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The annealing temperature was varied between room temperature and 500°C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25Pa and the discharge was performed at 310V. The TiC layer was grown in a methane atmosphere at 30Pa and 270V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400°C, TiO2 phase begun to appear and it was well observed at 500°C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2011.12.078</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Adsorbed layers and thin films ; Annealing ; Arc discharges ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Condensed matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Crystallite size ; Crystallites ; Electron and ion emission by liquids and solids; impact phenomena ; Exact sciences and technology ; Materials science ; Microstrain ; Morphology ; Other heat and thermomechanical treatments ; Photoemission and photoelectron spectra ; Physics ; Plasma ; Titanium carbide ; Titanium dioxide ; Titanium nitride ; Treatment of materials and its effects on microstructure and properties ; X-ray photoelectron spectroscopy ; XPS ; XRD</subject><ispartof>Physica. B, Condensed matter, 2012-08, Vol.407 (16), p.3248-3251</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-2b0605cab08d55afa8cdd41463932c2151bcfc6e20c658e7d7b0fb9eabfd90ae3</citedby><cites>FETCH-LOGICAL-c366t-2b0605cab08d55afa8cdd41463932c2151bcfc6e20c658e7d7b0fb9eabfd90ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2011.12.078$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26050685$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ramos-Rivera, L.</creatorcontrib><creatorcontrib>Escobar, D.</creatorcontrib><creatorcontrib>Benavides-Palacios, V.</creatorcontrib><creatorcontrib>Arango, P.J.</creatorcontrib><creatorcontrib>Restrepo-Parra, E.</creatorcontrib><title>Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge</title><title>Physica. B, Condensed matter</title><description>In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500°C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25Pa and the discharge was performed at 310V. The TiC layer was grown in a methane atmosphere at 30Pa and 270V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400°C, TiO2 phase begun to appear and it was well observed at 500°C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases.</description><subject>Adsorbed layers and thin films</subject><subject>Annealing</subject><subject>Arc discharges</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Condensed matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallite size</subject><subject>Crystallites</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Microstrain</subject><subject>Morphology</subject><subject>Other heat and thermomechanical treatments</subject><subject>Photoemission and photoelectron spectra</subject><subject>Physics</subject><subject>Plasma</subject><subject>Titanium carbide</subject><subject>Titanium dioxide</subject><subject>Titanium nitride</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><subject>X-ray photoelectron spectroscopy</subject><subject>XPS</subject><subject>XRD</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwC1i8ILEk9UfipAMDqviSCixltvxxbl2lSbBbUP49Lq0Y8XKS9dzdew9C15TklFAxWef9aog6Z4TSnLKcVPUJGtG64hmjvDxFIzJlNCtKJs7RRYxrkh6t6Ai9PjgHZos7h1Xbgmp8u8R96AzEiLsWL_zbZOFnWPtGDRAiXobuu8V6wP2uiWCxCgZbH81KhSVcojOn0vfVsY7Rx-PDYvaczd-fXmb388xwIbYZ00SQ0ihNaluWyqnaWFvQQvApZ4bRkmrjjABGjChrqGylidNTUNrZKVHAx-j2MDcl_dxB3MpNigBNo1rodlFSwmtWMMZEQvkBNaGLMYCTffAbFYYEyb08uZa_8uRenqRMJnmp6-a4QEWjGhdUa3z8a2UpPhF1mbi7Awfp2i8PQUbjoTVgfUhape38v3t-ACFHhmc</recordid><startdate>20120815</startdate><enddate>20120815</enddate><creator>Ramos-Rivera, L.</creator><creator>Escobar, D.</creator><creator>Benavides-Palacios, V.</creator><creator>Arango, P.J.</creator><creator>Restrepo-Parra, E.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120815</creationdate><title>Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge</title><author>Ramos-Rivera, L. ; Escobar, D. ; Benavides-Palacios, V. ; Arango, P.J. ; Restrepo-Parra, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-2b0605cab08d55afa8cdd41463932c2151bcfc6e20c658e7d7b0fb9eabfd90ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Adsorbed layers and thin films</topic><topic>Annealing</topic><topic>Arc discharges</topic><topic>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</topic><topic>Condensed matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallite size</topic><topic>Crystallites</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Microstrain</topic><topic>Morphology</topic><topic>Other heat and thermomechanical treatments</topic><topic>Photoemission and photoelectron spectra</topic><topic>Physics</topic><topic>Plasma</topic><topic>Titanium carbide</topic><topic>Titanium dioxide</topic><topic>Titanium nitride</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><topic>X-ray photoelectron spectroscopy</topic><topic>XPS</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ramos-Rivera, L.</creatorcontrib><creatorcontrib>Escobar, D.</creatorcontrib><creatorcontrib>Benavides-Palacios, V.</creatorcontrib><creatorcontrib>Arango, P.J.</creatorcontrib><creatorcontrib>Restrepo-Parra, E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ramos-Rivera, L.</au><au>Escobar, D.</au><au>Benavides-Palacios, V.</au><au>Arango, P.J.</au><au>Restrepo-Parra, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2012-08-15</date><risdate>2012</risdate><volume>407</volume><issue>16</issue><spage>3248</spage><epage>3251</epage><pages>3248-3251</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500°C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25Pa and the discharge was performed at 310V. The TiC layer was grown in a methane atmosphere at 30Pa and 270V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400°C, TiO2 phase begun to appear and it was well observed at 500°C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2011.12.078</doi><tpages>4</tpages></addata></record> |
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| subjects | Adsorbed layers and thin films Annealing Arc discharges Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystallite size Crystallites Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Materials science Microstrain Morphology Other heat and thermomechanical treatments Photoemission and photoelectron spectra Physics Plasma Titanium carbide Titanium dioxide Titanium nitride Treatment of materials and its effects on microstructure and properties X-ray photoelectron spectroscopy XPS XRD |
| title | Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge |
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