Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state...
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| Veröffentlicht in: | Nano letters 2012-08, Vol.12 (8), p.3941-3947 |
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| container_title | Nano letters |
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| creator | Chandiran, Aravind Kumar Tetreault, Nicolas Humphry-Baker, Robin Kessler, Florian Baranoff, Etienne Yi, Chenyi Nazeeruddin, Mohammad Khaja Grätzel, Michael |
| description | Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO2 conduction band and the hole injection into the electrolyte are characterized in detail. |
| doi_str_mv | 10.1021/nl301023r |
| format | Article |
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The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO2 conduction band and the hole injection into the electrolyte are characterized in detail.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl301023r</identifier><identifier>PMID: 22681486</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electron states ; Electronics ; Energy ; Exact sciences and technology ; Excitons and related phenomena ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Molecular electronics, nanoelectronics ; Natural energy ; Photovoltaic conversion ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solar cells. Photoelectrochemical cells ; Solar energy ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Nano letters, 2012-08, Vol.12 (8), p.3941-3947</ispartof><rights>Copyright © 2012 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl301023r$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl301023r$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26224765$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22681486$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chandiran, Aravind Kumar</creatorcontrib><creatorcontrib>Tetreault, Nicolas</creatorcontrib><creatorcontrib>Humphry-Baker, Robin</creatorcontrib><creatorcontrib>Kessler, Florian</creatorcontrib><creatorcontrib>Baranoff, Etienne</creatorcontrib><creatorcontrib>Yi, Chenyi</creatorcontrib><creatorcontrib>Nazeeruddin, Mohammad Khaja</creatorcontrib><creatorcontrib>Grätzel, Michael</creatorcontrib><title>Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. 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Solid state devices</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpFkclKBDEQhoMo7gdfQHIRvLRm7eU4zLjBwAijXpt0uloj3cmYpIXx7IMbcdRT_VV8tSN0QskFJYxe2p6TJLjfQvtUcpLlVcW2_3Qp9tBBCK-EkIpLsov2GMtLKsp8H30ux8Yq6waI4PGNYguOH0Zroe-NfcZztU7hZo0n0Q1Gb_wZrFww0TiLo8MT_WLgHTC9oPgJL1Zgs6nxejQR37sINhrVY2PxbA3ZEux34ge0eOl65fE0NQpHaKdTfYDjjT1Ej9dXD9PbbL64uZtO5plihMasEJRIKCvCKq5JISHn0BZdLniny1YJIYUAwhQt2oa1UoqmUbzr2rxhNCnJD9H5T92Vd28jhFgPJug0gbLgxlBTwllZVoLThJ5u0LEZoK1X3gzKr-vfyyXgbAOooFXfeWW1Cf9czpgocvnPKR3qVzd6mzZMnervz9V_n-NfR4uHNg</recordid><startdate>20120808</startdate><enddate>20120808</enddate><creator>Chandiran, Aravind Kumar</creator><creator>Tetreault, Nicolas</creator><creator>Humphry-Baker, Robin</creator><creator>Kessler, Florian</creator><creator>Baranoff, Etienne</creator><creator>Yi, Chenyi</creator><creator>Nazeeruddin, Mohammad Khaja</creator><creator>Grätzel, Michael</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20120808</creationdate><title>Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells</title><author>Chandiran, Aravind Kumar ; Tetreault, Nicolas ; Humphry-Baker, Robin ; Kessler, Florian ; Baranoff, Etienne ; Yi, Chenyi ; Nazeeruddin, Mohammad Khaja ; Grätzel, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a201t-74105e890293c075e63ed7f643fc8da44544e02a17db2d554bba3ffd6b21ba353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electron states</topic><topic>Electronics</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Excitons and related phenomena</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Semiconductor electronics. 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The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO2 conduction band and the hole injection into the electrolyte are characterized in detail.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>22681486</pmid><doi>10.1021/nl301023r</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron states Electronics Energy Exact sciences and technology Excitons and related phenomena Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Molecular electronics, nanoelectronics Natural energy Photovoltaic conversion Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solar cells. Photoelectrochemical cells Solar energy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells |
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