The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices
The effect of oxygen on the work function of tungsten electrodes has been studied. As expected, it was found that the presence of the metastable A15 (ß) phase is correlated with oxygen concentration. Tungsten films with minimal oxygen content contain only the stable bcc (¿) phase. However, after a f...
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| Veröffentlicht in: | IEEE electron device letters 2009-09, Vol.30 (9), p.925-927 |
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| creator | Grubbs, M.E. Deal, M. Nishi, Y. Clemens, B.M. |
| description | The effect of oxygen on the work function of tungsten electrodes has been studied. As expected, it was found that the presence of the metastable A15 (ß) phase is correlated with oxygen concentration. Tungsten films with minimal oxygen content contain only the stable bcc (¿) phase. However, after a forming gas anneal was performed on MOS capacitors made from these films, it was found that the ß phase converts completely to a strained ¿ phase. Despite this uniform transformation, it was found that the work function of the tungsten gate electrodes varies from 4.54-4.91 eV, depending on the partial pressure of oxygen that the tungsten films were grown in. This is a novel work function tuning technique, and it is hypothesized that the observed variation is due solely to the incorporation of oxygen from the growth environment into the W layer at the SiO 2 /W interface. |
| doi_str_mv | 10.1109/LED.2009.2026717 |
| format | Article |
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As expected, it was found that the presence of the metastable A15 (ß) phase is correlated with oxygen concentration. Tungsten films with minimal oxygen content contain only the stable bcc (¿) phase. However, after a forming gas anneal was performed on MOS capacitors made from these films, it was found that the ß phase converts completely to a strained ¿ phase. Despite this uniform transformation, it was found that the work function of the tungsten gate electrodes varies from 4.54-4.91 eV, depending on the partial pressure of oxygen that the tungsten films were grown in. This is a novel work function tuning technique, and it is hypothesized that the observed variation is due solely to the incorporation of oxygen from the growth environment into the W layer at the SiO 2 /W interface.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2026717</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Compound structure devices ; Design. Technologies. Operation analysis. Testing ; Dielectric, amorphous and glass solid devices ; Electrodes ; Electronics ; Exact sciences and technology ; Gates ; Integrated circuits ; Metal oxide semiconductors ; Metastasis ; MOS capacitors ; MOS devices ; Oxygen ; Oxygen content ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sputtering ; Temperature ; Transformations ; Tungsten ; Tuning ; work function ; Work functions ; X-ray scattering</subject><ispartof>IEEE electron device letters, 2009-09, Vol.30 (9), p.925-927</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c451t-dd9d42a6532515e8b8f72396ce3af306b148cd6ed3cb2be8b678e7f55398ac763</citedby><cites>FETCH-LOGICAL-c451t-dd9d42a6532515e8b8f72396ce3af306b148cd6ed3cb2be8b678e7f55398ac763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5208393$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5208393$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21960475$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Grubbs, M.E.</creatorcontrib><creatorcontrib>Deal, M.</creatorcontrib><creatorcontrib>Nishi, Y.</creatorcontrib><creatorcontrib>Clemens, B.M.</creatorcontrib><title>The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The effect of oxygen on the work function of tungsten electrodes has been studied. As expected, it was found that the presence of the metastable A15 (ß) phase is correlated with oxygen concentration. Tungsten films with minimal oxygen content contain only the stable bcc (¿) phase. However, after a forming gas anneal was performed on MOS capacitors made from these films, it was found that the ß phase converts completely to a strained ¿ phase. Despite this uniform transformation, it was found that the work function of the tungsten gate electrodes varies from 4.54-4.91 eV, depending on the partial pressure of oxygen that the tungsten films were grown in. This is a novel work function tuning technique, and it is hypothesized that the observed variation is due solely to the incorporation of oxygen from the growth environment into the W layer at the SiO 2 /W interface.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Integrated circuits</subject><subject>Metal oxide semiconductors</subject><subject>Metastasis</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>Oxygen</subject><subject>Oxygen content</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sputtering</subject><subject>Temperature</subject><subject>Transformations</subject><subject>Tungsten</subject><subject>Tuning</subject><subject>work function</subject><subject>Work functions</subject><subject>X-ray scattering</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1rGzEQxUVJoY7Te6EXQUnoZRN9a3UMtpMGXHyIS4-LrB256252E2k3NP99x9jkkEMuMzDv9x4Sj5AvnF1yztzVcjG_FIw5HMJYbj-QCde6LJg28oRMmFW8kJyZT-Q05x1jXCmrJmS9_gN0ESOEgfaRrv69bKGjfUcHvP_u0196M3ZhaPCC8nrstnlA4NYPaGvRlfoaMm06-nN1T-fw3ATIZ-Rj9G2Gz8c9Jb9uFuvZj2K5ur2bXS-LoDQfirp2tRLeaCk011BuymiFdCaA9FEys-GqDLWBWoaN2KBubAk2ai1d6YM1ckouDrmPqX8aIQ_VQ5MDtK3voB9zJTXTQkiG4Pd3Qc4kl1IZ6RD99gbd9WPq8BtIcecUF3YfyA5USH3OCWL1mJoHn14QqvZ9VNhHte-jOvaBlvNjsM_BtzH5LjT51Se4M0xZjdzXA9cAwKusBSvxdfI_N2SQgA</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Grubbs, M.E.</creator><creator>Deal, M.</creator><creator>Nishi, Y.</creator><creator>Clemens, B.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Integrated circuits</topic><topic>Metal oxide semiconductors</topic><topic>Metastasis</topic><topic>MOS capacitors</topic><topic>MOS devices</topic><topic>Oxygen</topic><topic>Oxygen content</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sputtering</topic><topic>Temperature</topic><topic>Transformations</topic><topic>Tungsten</topic><topic>Tuning</topic><topic>work function</topic><topic>Work functions</topic><topic>X-ray scattering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grubbs, M.E.</creatorcontrib><creatorcontrib>Deal, M.</creatorcontrib><creatorcontrib>Nishi, Y.</creatorcontrib><creatorcontrib>Clemens, B.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grubbs, M.E.</au><au>Deal, M.</au><au>Nishi, Y.</au><au>Clemens, B.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2009-09-01</date><risdate>2009</risdate><volume>30</volume><issue>9</issue><spage>925</spage><epage>927</epage><pages>925-927</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The effect of oxygen on the work function of tungsten electrodes has been studied. As expected, it was found that the presence of the metastable A15 (ß) phase is correlated with oxygen concentration. Tungsten films with minimal oxygen content contain only the stable bcc (¿) phase. However, after a forming gas anneal was performed on MOS capacitors made from these films, it was found that the ß phase converts completely to a strained ¿ phase. Despite this uniform transformation, it was found that the work function of the tungsten gate electrodes varies from 4.54-4.91 eV, depending on the partial pressure of oxygen that the tungsten films were grown in. This is a novel work function tuning technique, and it is hypothesized that the observed variation is due solely to the incorporation of oxygen from the growth environment into the W layer at the SiO 2 /W interface.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2026717</doi><tpages>3</tpages></addata></record> |
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| subjects | Annealing Applied sciences Compound structure devices Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electrodes Electronics Exact sciences and technology Gates Integrated circuits Metal oxide semiconductors Metastasis MOS capacitors MOS devices Oxygen Oxygen content Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sputtering Temperature Transformations Tungsten Tuning work function Work functions X-ray scattering |
| title | The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices |
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