Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects

Ru-Ta-C films deposited on silicon substrates were evaluated as barriers for copper metalization. The films were prepared by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally tuned by the respective deposition power of each targe...

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Veröffentlicht in:	Journal of electronic materials 2012, Vol.41 (1), p.138-143
Hauptverfasser:	Fang, J.S., Lin, J.H., Chen, B.Y., Chen, G.S., Chin, T.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING PROCESSES Applied sciences Barriers Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties CONNECTORS (ELECTRICAL) Copper Cross-disciplinary physics: materials science rheology DEPOSITION Deposition by sputtering ELECTRICAL CONDUCTIVITY Electrical resistivity Electronics Electronics and Microelectronics Exact sciences and technology FAILURE Instrumentation Interconnect Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Optimization Physics Silicon Solid State Physics Substrates Tantalum Thermal expansion thermomechanical effects and density Thermal properties of condensed matter Thermal properties of crystalline solids THERMAL STABILITY Transmission electron microscopy
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