Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects

Ru-Ta-C films deposited on silicon substrates were evaluated as barriers for copper metalization. The films were prepared by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally tuned by the respective deposition power of each targe...

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Veröffentlicht in:Journal of electronic materials 2012, Vol.41 (1), p.138-143
Hauptverfasser: Fang, J.S., Lin, J.H., Chen, B.Y., Chen, G.S., Chin, T.S.
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container_start_page 138
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creator Fang, J.S.
Lin, J.H.
Chen, B.Y.
Chen, G.S.
Chin, T.S.
description Ru-Ta-C films deposited on silicon substrates were evaluated as barriers for copper metalization. The films were prepared by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally tuned by the respective deposition power of each target. The fabricated Ru-Ta-C films were characterized via four-point probe measurement, x-ray diffractometry, field-emission electron probe microanalysis, and transmission electron microscopy. Failure temperature was evaluated by the sudden rise in electrical resistivity after annealing the Cu/Ru-Ta-C/Si sandwich films, and a reference bilayer Cu/(5 nm Ru)/(5 nm Ta-C)/Si scheme. The optimal compositions were 10 nm Ru 77 Ta 15 C 7 and (5 nm Ru)/(5 nm Ta-C), both of which showed failure temperature of 650°C for 30 min and electrical resistivity less than 150  μ Ω cm. Because of their high thermal stability and low electrical resistivity, both Ru-Ta-C and Ru/Ta-C films are promising barriers for Cu metalization.
doi_str_mv 10.1007/s11664-011-1797-4
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The films were prepared by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally tuned by the respective deposition power of each target. The fabricated Ru-Ta-C films were characterized via four-point probe measurement, x-ray diffractometry, field-emission electron probe microanalysis, and transmission electron microscopy. Failure temperature was evaluated by the sudden rise in electrical resistivity after annealing the Cu/Ru-Ta-C/Si sandwich films, and a reference bilayer Cu/(5 nm Ru)/(5 nm Ta-C)/Si scheme. The optimal compositions were 10 nm Ru 77 Ta 15 C 7 and (5 nm Ru)/(5 nm Ta-C), both of which showed failure temperature of 650°C for 30 min and electrical resistivity less than 150  μ Ω cm. Because of their high thermal stability and low electrical resistivity, both Ru-Ta-C and Ru/Ta-C films are promising barriers for Cu metalization.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-011-1797-4</doi><tpages>6</tpages></addata></record>
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subjects ANNEALING PROCESSES
Applied sciences
Barriers
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed matter: structure, mechanical and thermal properties
CONNECTORS (ELECTRICAL)
Copper
Cross-disciplinary physics: materials science
rheology
DEPOSITION
Deposition by sputtering
ELECTRICAL CONDUCTIVITY
Electrical resistivity
Electronics
Electronics and Microelectronics
Exact sciences and technology
FAILURE
Instrumentation
Interconnect
Materials
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Optical and Electronic Materials
Optimization
Physics
Silicon
Solid State Physics
Substrates
Tantalum
Thermal expansion
thermomechanical effects and density
Thermal properties of condensed matter
Thermal properties of crystalline solids
THERMAL STABILITY
Transmission electron microscopy
title Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects
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