Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects

The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 10 3  A/cm 2 . When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) in...

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Veröffentlicht in:Journal of electronic materials 2012-04, Vol.41 (4), p.730-740
Hauptverfasser: Huang, M. L., Zhou, S. M., Chen, L. D.
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Sprache:eng
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