Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects
The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 10 3 A/cm 2 . When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) in...
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Veröffentlicht in: | Journal of electronic materials 2012-04, Vol.41 (4), p.730-740 |
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Format: | Artikel |
Sprache: | eng |
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