Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition
Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposite...
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| Veröffentlicht in: | Journal of electronic materials 2011-04, Vol.40 (4), p.419-428 |
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| container_title | Journal of electronic materials |
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| creator | Scott, Robin C. Leedy, Kevin D. Bayraktaroglu, Burhan Look, David C. Smith, David J. Ding, Ding Lu, Xianfeng Zhang, Yong-Hang |
| description | Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H
2
in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides. |
| doi_str_mv | 10.1007/s11664-010-1396-9 |
| format | Article |
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2
in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-010-1396-9</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Annealing ; Carrier density ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Deposition ; Electronics and Microelectronics ; Forming ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Optoelectronics ; Oxides ; Pulsed laser deposition ; Solid State Physics ; Spectra ; Substrates ; Zinc oxide</subject><ispartof>Journal of electronic materials, 2011-04, Vol.40 (4), p.419-428</ispartof><rights>TMS 2010</rights><rights>Copyright Springer Science & Business Media Apr 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-d5eadb363c43cc79617daa1526cb3441cba91d04d83fe26c9330d27fd64ebf4f3</citedby><cites>FETCH-LOGICAL-c348t-d5eadb363c43cc79617daa1526cb3441cba91d04d83fe26c9330d27fd64ebf4f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-010-1396-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-010-1396-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Scott, Robin C.</creatorcontrib><creatorcontrib>Leedy, Kevin D.</creatorcontrib><creatorcontrib>Bayraktaroglu, Burhan</creatorcontrib><creatorcontrib>Look, David C.</creatorcontrib><creatorcontrib>Smith, David J.</creatorcontrib><creatorcontrib>Ding, Ding</creatorcontrib><creatorcontrib>Lu, Xianfeng</creatorcontrib><creatorcontrib>Zhang, Yong-Hang</creatorcontrib><title>Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H
2
in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.</description><subject>Annealing</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Deposition</subject><subject>Electronics and Microelectronics</subject><subject>Forming</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronics</subject><subject>Oxides</subject><subject>Pulsed laser deposition</subject><subject>Solid State Physics</subject><subject>Spectra</subject><subject>Substrates</subject><subject>Zinc oxide</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kc1KxDAUhYMoOP48gLvgyk00d5Km7XIYf2HEARXETUmT26FDJ6lJu_AZfGkzjCAIrnJP7jkfFw4hZ8AvgfP8KgIoJRkHzkCUipV7ZAKZFAwK9bZPJlwoYNlUZIfkKMY155BBARPy9eCabkRnkPqGPo91HIIekL7gpsc0jQGpdpYufRzYNfY-tkPrHZ05h7pr3Yom8ZgSodUdXQafUkOLcUu70-w6aUvf3VNaYa9DEvUnXY5dTNNCRwz0F3pCDhqdNqc_7zF5vb15md-zxdPdw3y2YEbIYmA2Q21roYSRwpi8VJBbrSGbKlMLKcHUugTLpS1Eg-mzFILbad5YJbFuZCOOycWO2wf_MWIcqk0bDXaddujHWAEXIIArXibr-R_r2o_BpeuqIpOlLCCXyQQ7kwk-xoBN1Yd2o8NnIlXbdqpdOxXf6tROtQVPd5mYvG6F4Rf8f-gbA4yT7g</recordid><startdate>20110401</startdate><enddate>20110401</enddate><creator>Scott, Robin C.</creator><creator>Leedy, Kevin D.</creator><creator>Bayraktaroglu, Burhan</creator><creator>Look, David C.</creator><creator>Smith, David J.</creator><creator>Ding, Ding</creator><creator>Lu, Xianfeng</creator><creator>Zhang, Yong-Hang</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110401</creationdate><title>Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition</title><author>Scott, Robin C. ; Leedy, Kevin D. ; Bayraktaroglu, Burhan ; Look, David C. ; Smith, David J. ; Ding, Ding ; Lu, Xianfeng ; Zhang, Yong-Hang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-d5eadb363c43cc79617daa1526cb3441cba91d04d83fe26c9330d27fd64ebf4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Deposition</topic><topic>Electronics and Microelectronics</topic><topic>Forming</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronics</topic><topic>Oxides</topic><topic>Pulsed laser deposition</topic><topic>Solid State Physics</topic><topic>Spectra</topic><topic>Substrates</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Scott, Robin C.</creatorcontrib><creatorcontrib>Leedy, Kevin D.</creatorcontrib><creatorcontrib>Bayraktaroglu, Burhan</creatorcontrib><creatorcontrib>Look, David C.</creatorcontrib><creatorcontrib>Smith, David J.</creatorcontrib><creatorcontrib>Ding, Ding</creatorcontrib><creatorcontrib>Lu, Xianfeng</creatorcontrib><creatorcontrib>Zhang, Yong-Hang</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Scott, Robin C.</au><au>Leedy, Kevin D.</au><au>Bayraktaroglu, Burhan</au><au>Look, David C.</au><au>Smith, David J.</au><au>Ding, Ding</au><au>Lu, Xianfeng</au><au>Zhang, Yong-Hang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2011-04-01</date><risdate>2011</risdate><volume>40</volume><issue>4</issue><spage>419</spage><epage>428</epage><pages>419-428</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H
2
in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-010-1396-9</doi><tpages>10</tpages></addata></record> |
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| subjects | Annealing Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Deposition Electronics and Microelectronics Forming Instrumentation Materials Science Optical and Electronic Materials Optoelectronics Oxides Pulsed laser deposition Solid State Physics Spectra Substrates Zinc oxide |
| title | Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition |
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