Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates
For many years, direct bonded copper (DBC) substrates have proved to be an excellent solution for electrical isolation and thermal management of high-power semiconductor modules. However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching...
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| Veröffentlicht in: | Journal of electronic materials 2011-10, Vol.40 (10), p.2119-2125 |
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| creator | Mei, Yunhui Lu, Guo-Quan Chen, Xu Gang, Chen Luo, Shufang Ibitayo, Dimeji |
| description | For many years, direct bonded copper (DBC) substrates have proved to be an excellent solution for electrical isolation and thermal management of high-power semiconductor modules. However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching even in industry. As is known, growth of metal dendrites could be observed with the assistance of electric field, temperature, and humidity. Metal dendrites normally grow from the cathode to anode. Silver and copper are two kinds of metals susceptible to migration. In this work, copper dendrites could be formed at 400°C and 50 V/mm between conductors. These dendrites may impact the reliability of DBC in power electronic applications. Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future. |
| doi_str_mv | 10.1007/s11664-011-1716-8 |
| format | Article |
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However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching even in industry. As is known, growth of metal dendrites could be observed with the assistance of electric field, temperature, and humidity. Metal dendrites normally grow from the cathode to anode. Silver and copper are two kinds of metals susceptible to migration. In this work, copper dendrites could be formed at 400°C and 50 V/mm between conductors. These dendrites may impact the reliability of DBC in power electronic applications. Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-011-1716-8</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Adhesive bonding ; ANODES ; Applied sciences ; BONDING ; BONDS ; CATHODES ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Copper ; Dendritic structure ; DENDRITIC STRUCTURES ; Diffusion in solids ; Electric fields ; Electrical engineering ; ELECTRONIC PRODUCTS ; Electronics ; Electronics and Microelectronics ; ETCHING ; Exact sciences and technology ; Instrumentation ; Joining, thermal cutting: metallurgical aspects ; Materials ; Materials Science ; Metals. 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Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future.</description><subject>Adhesive bonding</subject><subject>ANODES</subject><subject>Applied sciences</subject><subject>BONDING</subject><subject>BONDS</subject><subject>CATHODES</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Copper</subject><subject>Dendritic structure</subject><subject>DENDRITIC STRUCTURES</subject><subject>Diffusion in solids</subject><subject>Electric fields</subject><subject>Electrical engineering</subject><subject>ELECTRONIC PRODUCTS</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>Instrumentation</subject><subject>Joining, thermal cutting: metallurgical aspects</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Metals. Metallurgy</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Residues</subject><subject>SEMICONDUCTORS</subject><subject>Solid State Physics</subject><subject>Substrates</subject><subject>Thermal management</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kEtLxDAUhYMoOD5-gLuCCOMimtvkJu3SmfExICg-wF2JaTJWxmZMWsF_b6QqIri6i_Odw7mHkD1gR8CYOo4AUgrKACgokLRYIyNAwSkU8mGdjBiXQDHnuEm2YnxmDBAKGJGbeftmY9csdNf4NvMuu_axo6edecqmfrWyIbuxsal7myV51gRrumzi29rW3_p4NpkeZrf9Y-yC7mzcIRtOL6Pd_brb5P7s9G56QS-vzufTk0tqhMCOFlI7LFRZG-cEMlRMCYlWK46WOQ5a5SY3j5yhK4VQygkDiBwlU5xZh3ybjIfcVfCvfXqiemmisculbq3vYwWMA2clK3lC9_-gz74PbWqXKMBclYAyUTBQJvgYg3XVKjQvOrwnqPpcuRpWrtLK1efKVZE8B1_JOhq9dEG3pok_xlxgIQsJicsHLiapXdjwu8F_4R_pC4k8</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Mei, Yunhui</creator><creator>Lu, Guo-Quan</creator><creator>Chen, Xu</creator><creator>Gang, Chen</creator><creator>Luo, Shufang</creator><creator>Ibitayo, Dimeji</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20111001</creationdate><title>Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates</title><author>Mei, Yunhui ; Lu, Guo-Quan ; Chen, Xu ; Gang, Chen ; Luo, Shufang ; Ibitayo, Dimeji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c445t-86af5879dcff4505707465ea735e0f31a72c2cb305f94477f4c1553560730ef53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Adhesive bonding</topic><topic>ANODES</topic><topic>Applied sciences</topic><topic>BONDING</topic><topic>BONDS</topic><topic>CATHODES</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Copper</topic><topic>Dendritic structure</topic><topic>DENDRITIC STRUCTURES</topic><topic>Diffusion in solids</topic><topic>Electric fields</topic><topic>Electrical engineering</topic><topic>ELECTRONIC PRODUCTS</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>ETCHING</topic><topic>Exact sciences and technology</topic><topic>Instrumentation</topic><topic>Joining, thermal cutting: metallurgical aspects</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Metals. Metallurgy</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Residues</topic><topic>SEMICONDUCTORS</topic><topic>Solid State Physics</topic><topic>Substrates</topic><topic>Thermal management</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mei, Yunhui</creatorcontrib><creatorcontrib>Lu, Guo-Quan</creatorcontrib><creatorcontrib>Chen, Xu</creatorcontrib><creatorcontrib>Gang, Chen</creatorcontrib><creatorcontrib>Luo, Shufang</creatorcontrib><creatorcontrib>Ibitayo, Dimeji</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mei, Yunhui</au><au>Lu, Guo-Quan</au><au>Chen, Xu</au><au>Gang, Chen</au><au>Luo, Shufang</au><au>Ibitayo, Dimeji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2011-10-01</date><risdate>2011</risdate><volume>40</volume><issue>10</issue><spage>2119</spage><epage>2125</epage><pages>2119-2125</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>For many years, direct bonded copper (DBC) substrates have proved to be an excellent solution for electrical isolation and thermal management of high-power semiconductor modules. However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching even in industry. As is known, growth of metal dendrites could be observed with the assistance of electric field, temperature, and humidity. Metal dendrites normally grow from the cathode to anode. Silver and copper are two kinds of metals susceptible to migration. In this work, copper dendrites could be formed at 400°C and 50 V/mm between conductors. These dendrites may impact the reliability of DBC in power electronic applications. Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-011-1716-8</doi><tpages>7</tpages></addata></record> |
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| subjects | Adhesive bonding ANODES Applied sciences BONDING BONDS CATHODES Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Copper Dendritic structure DENDRITIC STRUCTURES Diffusion in solids Electric fields Electrical engineering ELECTRONIC PRODUCTS Electronics Electronics and Microelectronics ETCHING Exact sciences and technology Instrumentation Joining, thermal cutting: metallurgical aspects Materials Materials Science Metals. Metallurgy Optical and Electronic Materials Physics Residues SEMICONDUCTORS Solid State Physics Substrates Thermal management Transport properties of condensed matter (nonelectronic) |
| title | Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates |
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