Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates

The long-term joint reliability of SiC power devices bonded on a ceramic substrate metalized with copper (Cu) and electroless nickel-phosphorus [Ni(P)] using a gold-germanium (Au-Ge) eutectic solder was investigated at 330°C in air. Rapid growth of Ni-Ge intermetallic compounds (IMCs) at the solder/...

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Veröffentlicht in:	Journal of electronic materials 2011-07, Vol.40 (7), p.1563-1571
Hauptverfasser:	Lang, Fengqun, Yamaguchi, Hiroshi, Ohashi, Hiromichi, Sato, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Brazing. Soldering CERAMICS Characterization and Evaluation of Materials Chemistry and Materials Science Copper Cross-disciplinary physics: materials science rheology Deposition by sputtering Devices DIFFUSION DIFFUSION BARRIERS Electric power generation Electric resistance ELECTRICITY ELECTRONIC PRODUCTS Electronics Electronics and Microelectronics Exact sciences and technology Gold Instrumentation Interfaces Joining, thermal cutting: metallurgical aspects Joint strength Materials Materials Science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Nickel Optical and Electronic Materials Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SILICON CARBIDE Soldering SOLDERING ALLOYS Solders Solid State Physics
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