Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges. Innovative technologies such as metal gate/high- k dielectric integration, source/drain engineering, mobility enhancement technology, new device archit...

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Veröffentlicht in:	Journal of electronic materials 2011-07, Vol.40 (7), p.1584-1612, Article 1584
Hauptverfasser:	Song, Yi, Zhou, Huajie, Xu, Qiuxia, Luo, Jun, Yin, Haizhou, Yan, Jiang, Zhong, Huicai
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels Characterization and Evaluation of Materials Chemistry and Materials Science CMOS Devices Drains Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Integrated circuits Materials Materials Science Nanostructure Optical and Electronic Materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Solid State Physics Strain Stresses Transistors
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