High quality factor of AlN microdisks embedding GaN quantum dots

We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride bas...

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Veröffentlicht in:Physica Status Solidi C 2011-07, Vol.8 (7-8), p.2328-2330
Hauptverfasser: Mexis, M., Sergent, S., Guillet, T., Brimont, C., Bretagnon, T., Gil, B., Semond, F., Leroux, M., Néel, D., David, S., Chécoury, X., Boucaud, P.
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Sprache:eng
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Zusammenfassung:We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride based cavities. We attribute this improvement of the Q factor to the etching quality and to the relatively low cavity loss by inserting dots into the microdisks. The uniformity of the resonant modes with respect to a wide range of energies allows us to identify the different radial mode families. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201001161