High quality factor of AlN microdisks embedding GaN quantum dots
We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride bas...
Gespeichert in:
Veröffentlicht in: | Physica Status Solidi C 2011-07, Vol.8 (7-8), p.2328-2330 |
---|---|
Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride based cavities. We attribute this improvement of the Q factor to the etching quality and to the relatively low cavity loss by inserting dots into the microdisks. The uniformity of the resonant modes with respect to a wide range of energies allows us to identify the different radial mode families. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
---|---|
ISSN: | 1862-6351 1610-1642 1610-1642 |
DOI: | 10.1002/pssc.201001161 |