Role of interface in ferromagnetism of (Zn,Co)O films
We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the atomic layer deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evidences allow us to reject several other ex...
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| Veröffentlicht in: | Physica Status Solidi (b) 2011-07, Vol.248 (7), p.1596-1600 |
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| container_title | Physica Status Solidi (b) |
| container_volume | 248 |
| creator | Godlewski, M. Guziewicz, E. Łukasiewicz, M. I. Kowalik, I. A. Sawicki, M. Witkowski, B. S. Jakieła, R. Lisowski, W. Sobczak, J. W. Krawczyk, M. |
| description | We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the atomic layer deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material. |
| doi_str_mv | 10.1002/pssb.201001142 |
| format | Article |
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I. ; Kowalik, I. A. ; Sawicki, M. ; Witkowski, B. S. ; Jakieła, R. ; Lisowski, W. ; Sobczak, J. W. ; Krawczyk, M.</creator><creatorcontrib>Godlewski, M. ; Guziewicz, E. ; Łukasiewicz, M. I. ; Kowalik, I. A. ; Sawicki, M. ; Witkowski, B. S. ; Jakieła, R. ; Lisowski, W. ; Sobczak, J. W. ; Krawczyk, M.</creatorcontrib><description>We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the atomic layer deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.</description><identifier>ISSN: 0370-1972</identifier><identifier>ISSN: 1521-3951</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201001142</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Accumulations ; atomic layer deposition ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Deposition ; diluted magnetic semiconductors ; Exact sciences and technology ; Ferromagnetic materials ; ferromagnetic response ; Ferromagnetism ; Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) ; Magnetic properties and materials ; Magnetic properties of surface, thin films and multilayers ; Physics ; ZnCoO</subject><ispartof>Physica Status Solidi (b), 2011-07, Vol.248 (7), p.1596-1600</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3902-a749262142c7ef045aed485674f158472c5e27cf29bed34963a3ac5321ea62753</citedby><cites>FETCH-LOGICAL-c3902-a749262142c7ef045aed485674f158472c5e27cf29bed34963a3ac5321ea62753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.201001142$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.201001142$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,1417,23929,23930,25139,27923,27924,45573,45574</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24295032$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Godlewski, M.</creatorcontrib><creatorcontrib>Guziewicz, E.</creatorcontrib><creatorcontrib>Łukasiewicz, M. 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The accumulated experimental evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.</description><subject>Accumulations</subject><subject>atomic layer deposition</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Deposition</subject><subject>diluted magnetic semiconductors</subject><subject>Exact sciences and technology</subject><subject>Ferromagnetic materials</subject><subject>ferromagnetic response</subject><subject>Ferromagnetism</subject><subject>Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)</subject><subject>Magnetic properties and materials</subject><subject>Magnetic properties of surface, thin films and multilayers</subject><subject>Physics</subject><subject>ZnCoO</subject><issn>0370-1972</issn><issn>1521-3951</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LAzEQxYMoWKtXz3sRKrg1n5vmqEVbodhiFcFLSNOJRPejJlu0_727tBRvnubB_N6b4SF0TnCfYEyvVzEu-hQ3mhBOD1CHCEpSpgQ5RB3MJE6JkvQYncT4gTGWhJEOEk9VDknlEl_WEJyx0KjEQQhVYd5LqH0s2nXvrbwaVpfTxPm8iKfoyJk8wtludtHL_d3zcJxOpqOH4c0ktUxhmhrJFc1o842V4DAXBpZ8IDLJHREDLqkVQKV1VC1gybjKmGHGCkYJmIxKwbqot81dheprDbHWhY8W8tyUUK2jJpgRqjIsVYP2t6gNVYwBnF4FX5iwaSDd9qPbfvS-n8Zwscs20ZrcBVNaH_cuyqkSmLWc2nLfPofNP6l6Np_f_r2Rbr0-1vCz95rwqTPJpNCvjyM9I0yNpRB6zn4B11uCkQ</recordid><startdate>201107</startdate><enddate>201107</enddate><creator>Godlewski, M.</creator><creator>Guziewicz, E.</creator><creator>Łukasiewicz, M. 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W.</au><au>Krawczyk, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of interface in ferromagnetism of (Zn,Co)O films</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2011-07</date><risdate>2011</risdate><volume>248</volume><issue>7</issue><spage>1596</spage><epage>1600</epage><pages>1596-1600</pages><issn>0370-1972</issn><issn>1521-3951</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the atomic layer deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.201001142</doi><tpages>5</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Accumulations atomic layer deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Deposition diluted magnetic semiconductors Exact sciences and technology Ferromagnetic materials ferromagnetic response Ferromagnetism Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) Magnetic properties and materials Magnetic properties of surface, thin films and multilayers Physics ZnCoO |
| title | Role of interface in ferromagnetism of (Zn,Co)O films |
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