Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

We report the development of AlGaN‐based deep ultraviolet LEDs by plasma‐assisted molecular beam epitaxy. The devices were evaluated under bare‐die configuration, placed outside an integrated sphere, and were found to have optical power of 1.3 mW and 1.2 mW at 300 nm and 277 nm, under pulsed driving...

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