Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

In this paper, we present a study on the substrate removal of AlGaN/GaN/AlGaN double‐heterostructure FETs (DHFETs) on Si (111) substrates by 2 different approaches: a global versus local removal route. We report on the significant enhancement of breakdown voltage (VBD) of DHFETs with only 2 µm thick...

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Veröffentlicht in:	Physica status solidi. C 2011-07, Vol.8 (7-8), p.2216-2218
Hauptverfasser:	Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E., Marcon, Denis, Cheng, Kai, Geens, Karen, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P., Borghs, Gustaaf
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN/AlGaN Aluminum gallium nitrides Breakdown breakdown voltage Buffers DHFETs Electric potential Etching Gallium nitrides MOCVD Silicon substrates substrate removal Voltage
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