Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X‐ray diffraction measurements reveal similar growth rates and In concentrations for c‐p...

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Veröffentlicht in:	Physica Status Solidi (b) 2011-03, Vol.248 (3), p.600-604
Hauptverfasser:	Jönen, Holger, Rossow, Uwe, Bremers, Heiko, Hoffmann, Lars, Brendel, Moritz, Dräger, Alexander Daniel, Metzner, Sebastian, Bertram, Frank, Christen, Jürgen, Schwaiger, Stephan, Scholz, Ferdinand, Thalmair, Johannes, Zweck, Josef, Hangleiter, Andreas
Format:	Artikel
Sprache:	eng
Schlagworte:	Diffraction GaInN Gallium nitrides High density Indium metal-organic vapor phase epitaxy Optical properties photoluminescence Quantum wells Stacking faults X-ray diffraction X-rays
Online-Zugang:	Volltext
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