Semi-polar nitride surfaces and heterostructures
This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) a...
Gespeichert in:
| Veröffentlicht in: | Physica Status Solidi (b) 2011-03, Vol.248 (3), p.561-573 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 573 |
|---|---|
| container_issue | 3 |
| container_start_page | 561 |
| container_title | Physica Status Solidi (b) |
| container_volume | 248 |
| creator | Strittmatter, André Northrup, John E. Johnson, Noble M. Kisin, Mikhail V. Spiberg, Philippe El-Ghoroury, Hussein Usikov, Alexander Syrkin, Alexander |
| description | This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) and non‐polar (1100) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (1122) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large‐area GaN(1122)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated. |
| doi_str_mv | 10.1002/pssb.201046422 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1031292898</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1031292898</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4262-1dd8e322f3b932fe19ebcf3185ce157cda15641b8123c2db4bfe8bbccb1fde533</originalsourceid><addsrcrecordid>eNqFkL1PwzAQRy0EEqWwMmdkSfHZcT5GqGhLVZWKghgt2zmLQNoEOxHtf0-qoIqN6Zb3fjo9Qq6BjoBSdlt7r0eMAo3iiLETMgDBIOSZgFMyoDyhIWQJOycX3n9QShPgMCB0jZsirKtSuWBbNK7IMfCts8qgD9Q2D96xQVf5xrWmaR36S3JmVenx6vcOyevk4WU8CxdP08fx3SI0EYtZCHmeImfMcp1xZhEy1MZySIVBEInJFYg4Ap0C44blOtIWU62N0WBzFJwPyU2_W7vqq0XfyE3hDZal2mLVegmUA8tYmqUdOupR0z3qHVpZu2Kj3L6D5CGNPKSRxzSdkPXCd1Hi_h9artbr-79u2LuFb3B3dJX7lHHCEyHfllM5ETO6nK_m8pn_ACvXeCY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1031292898</pqid></control><display><type>article</type><title>Semi-polar nitride surfaces and heterostructures</title><source>Wiley Journals</source><creator>Strittmatter, André ; Northrup, John E. ; Johnson, Noble M. ; Kisin, Mikhail V. ; Spiberg, Philippe ; El-Ghoroury, Hussein ; Usikov, Alexander ; Syrkin, Alexander</creator><creatorcontrib>Strittmatter, André ; Northrup, John E. ; Johnson, Noble M. ; Kisin, Mikhail V. ; Spiberg, Philippe ; El-Ghoroury, Hussein ; Usikov, Alexander ; Syrkin, Alexander</creatorcontrib><description>This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) and non‐polar (1100) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (1122) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large‐area GaN(1122)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.</description><identifier>ISSN: 0370-1972</identifier><identifier>ISSN: 1521-3951</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201046422</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Devices ; epitaxial growth ; Epitaxy ; Gallium nitrides ; Heterostructures ; Indium gallium nitrides ; interfaces ; Lasers ; Light emitting ; nitrides ; optical properties ; Vapour</subject><ispartof>Physica Status Solidi (b), 2011-03, Vol.248 (3), p.561-573</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4262-1dd8e322f3b932fe19ebcf3185ce157cda15641b8123c2db4bfe8bbccb1fde533</citedby><cites>FETCH-LOGICAL-c4262-1dd8e322f3b932fe19ebcf3185ce157cda15641b8123c2db4bfe8bbccb1fde533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.201046422$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.201046422$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Strittmatter, André</creatorcontrib><creatorcontrib>Northrup, John E.</creatorcontrib><creatorcontrib>Johnson, Noble M.</creatorcontrib><creatorcontrib>Kisin, Mikhail V.</creatorcontrib><creatorcontrib>Spiberg, Philippe</creatorcontrib><creatorcontrib>El-Ghoroury, Hussein</creatorcontrib><creatorcontrib>Usikov, Alexander</creatorcontrib><creatorcontrib>Syrkin, Alexander</creatorcontrib><title>Semi-polar nitride surfaces and heterostructures</title><title>Physica Status Solidi (b)</title><addtitle>Phys. Status Solidi B</addtitle><description>This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) and non‐polar (1100) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (1122) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large‐area GaN(1122)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.</description><subject>Devices</subject><subject>epitaxial growth</subject><subject>Epitaxy</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>Indium gallium nitrides</subject><subject>interfaces</subject><subject>Lasers</subject><subject>Light emitting</subject><subject>nitrides</subject><subject>optical properties</subject><subject>Vapour</subject><issn>0370-1972</issn><issn>1521-3951</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkL1PwzAQRy0EEqWwMmdkSfHZcT5GqGhLVZWKghgt2zmLQNoEOxHtf0-qoIqN6Zb3fjo9Qq6BjoBSdlt7r0eMAo3iiLETMgDBIOSZgFMyoDyhIWQJOycX3n9QShPgMCB0jZsirKtSuWBbNK7IMfCts8qgD9Q2D96xQVf5xrWmaR36S3JmVenx6vcOyevk4WU8CxdP08fx3SI0EYtZCHmeImfMcp1xZhEy1MZySIVBEInJFYg4Ap0C44blOtIWU62N0WBzFJwPyU2_W7vqq0XfyE3hDZal2mLVegmUA8tYmqUdOupR0z3qHVpZu2Kj3L6D5CGNPKSRxzSdkPXCd1Hi_h9artbr-79u2LuFb3B3dJX7lHHCEyHfllM5ETO6nK_m8pn_ACvXeCY</recordid><startdate>201103</startdate><enddate>201103</enddate><creator>Strittmatter, André</creator><creator>Northrup, John E.</creator><creator>Johnson, Noble M.</creator><creator>Kisin, Mikhail V.</creator><creator>Spiberg, Philippe</creator><creator>El-Ghoroury, Hussein</creator><creator>Usikov, Alexander</creator><creator>Syrkin, Alexander</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201103</creationdate><title>Semi-polar nitride surfaces and heterostructures</title><author>Strittmatter, André ; Northrup, John E. ; Johnson, Noble M. ; Kisin, Mikhail V. ; Spiberg, Philippe ; El-Ghoroury, Hussein ; Usikov, Alexander ; Syrkin, Alexander</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4262-1dd8e322f3b932fe19ebcf3185ce157cda15641b8123c2db4bfe8bbccb1fde533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Devices</topic><topic>epitaxial growth</topic><topic>Epitaxy</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>Indium gallium nitrides</topic><topic>interfaces</topic><topic>Lasers</topic><topic>Light emitting</topic><topic>nitrides</topic><topic>optical properties</topic><topic>Vapour</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Strittmatter, André</creatorcontrib><creatorcontrib>Northrup, John E.</creatorcontrib><creatorcontrib>Johnson, Noble M.</creatorcontrib><creatorcontrib>Kisin, Mikhail V.</creatorcontrib><creatorcontrib>Spiberg, Philippe</creatorcontrib><creatorcontrib>El-Ghoroury, Hussein</creatorcontrib><creatorcontrib>Usikov, Alexander</creatorcontrib><creatorcontrib>Syrkin, Alexander</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Strittmatter, André</au><au>Northrup, John E.</au><au>Johnson, Noble M.</au><au>Kisin, Mikhail V.</au><au>Spiberg, Philippe</au><au>El-Ghoroury, Hussein</au><au>Usikov, Alexander</au><au>Syrkin, Alexander</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semi-polar nitride surfaces and heterostructures</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2011-03</date><risdate>2011</risdate><volume>248</volume><issue>3</issue><spage>561</spage><epage>573</epage><pages>561-573</pages><issn>0370-1972</issn><issn>1521-3951</issn><eissn>1521-3951</eissn><abstract>This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) and non‐polar (1100) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (1122) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large‐area GaN(1122)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.201046422</doi><tpages>13</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0370-1972 |
| ispartof | Physica Status Solidi (b), 2011-03, Vol.248 (3), p.561-573 |
| issn | 0370-1972 1521-3951 1521-3951 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1031292898 |
| source | Wiley Journals |
| subjects | Devices epitaxial growth Epitaxy Gallium nitrides Heterostructures Indium gallium nitrides interfaces Lasers Light emitting nitrides optical properties Vapour |
| title | Semi-polar nitride surfaces and heterostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T08%3A28%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Semi-polar%20nitride%20surfaces%20and%20heterostructures&rft.jtitle=Physica%20Status%20Solidi%20(b)&rft.au=Strittmatter,%20Andr%C3%A9&rft.date=2011-03&rft.volume=248&rft.issue=3&rft.spage=561&rft.epage=573&rft.pages=561-573&rft.issn=0370-1972&rft.eissn=1521-3951&rft_id=info:doi/10.1002/pssb.201046422&rft_dat=%3Cproquest_cross%3E1031292898%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1031292898&rft_id=info:pmid/&rfr_iscdi=true |