Intensity-dependent ultrafast dynamics of injection currents in unbiased GaAs quantum wells

The intensity dependence of optically‐induced injection currents in unbiased GaAs semiconductor quantum wells grown in [110] direction is investigated theoretically for a number of well widths. Our microscopic analysis is based on a 14 × 14 band k · p method in combination with the multisubband semi...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2011-03, Vol.5 (3), p.119-121
Hauptverfasser:	Pochwała, Michał, Duc, Huynh Thanh, Förstner, Jens, Meier, Torsten
Format:	Artikel
Sprache:	eng
Schlagworte:	Bloch equations Condensed matter: electronic structure, electrical, magnetic, and optical properties Dynamics Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Excitation Gallium arsenide Gallium arsenides Injection current k · p method Mathematical analysis photocurrents Physics Quantum wells semiconductor quantum wells Semiconductors
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