Self-Assembled Monolayers Made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(Triethoxysilyl)Propylcarbamate for Ultrathin Film Transistors

A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-te...

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Veröffentlicht in:Langmuir 2012-07, Vol.28 (29), p.10948-10955
Hauptverfasser: Heo, Dong Uk, Lee, Joo Bin, Han, Yoon Deok, Joo, Jinsoo, Lee, Hosuk, Lee, Hosun, Choi, Dong Hoon
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container_end_page 10955
container_issue 29
container_start_page 10948
container_title Langmuir
container_volume 28
creator Heo, Dong Uk
Lee, Joo Bin
Han, Yoon Deok
Joo, Jinsoo
Lee, Hosuk
Lee, Hosun
Choi, Dong Hoon
description A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-terminated X-shaped, anthracene-based semiconducting molecule in the presence of tin catalyst. The 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV–vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy–PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness ∼ 16.09 nm). The device UTFT-I, made of 0.06 wt % 5,5′-(9,10-bis(phenylethynyl)anthracene-2,6-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/SiO2 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/SiO2, exhibited field effect mobilities of 0.04 cm2 V–1 s–1 (I on/off ∼ 6.3 × 103 to 1.0 × 104). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.
doi_str_mv 10.1021/la3020942
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The 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV–vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy–PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness ∼ 16.09 nm). 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The device UTFT-I, made of 0.06 wt % 5,5′-(9,10-bis(phenylethynyl)anthracene-2,6-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/SiO2 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/SiO2, exhibited field effect mobilities of 0.04 cm2 V–1 s–1 (I on/off ∼ 6.3 × 103 to 1.0 × 104). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>22746296</pmid><doi>10.1021/la3020942</doi><tpages>8</tpages></addata></record>
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subjects Anthracenes - chemical synthesis
Anthracenes - chemistry
Molecular Structure
Silanes - chemical synthesis
Silanes - chemistry
Transistors, Electronic
title Self-Assembled Monolayers Made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(Triethoxysilyl)Propylcarbamate for Ultrathin Film Transistors
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