Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

Conductance quantization phenomena are observed in oxide‐based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic‐scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controll...

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Veröffentlicht in:	Advanced materials (Weinheim) 2012-08, Vol.24 (29), p.3941-3946
Hauptverfasser:	Zhu, Xiaojian, Su, Wenjing, Liu, Yiwei, Hu, Benlin, Pan, Liang, Lu, Wei, Zhang, Jiandi, Li, Run-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Nanostructures - chemistry Nanotechnology oxide-based sandwich Oxides - chemistry quantum conductance Quantum Theory resistive random access memory resistive switching Semiconductors
Online-Zugang:	Volltext
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