Effects of Hf incorporation in solution-processed Hf-InZnO TFTs
In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of o...
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| Veröffentlicht in: | Thin solid films 2011-06, Vol.519 (17), p.5740-5743 |
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| container_end_page | 5743 |
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| container_issue | 17 |
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| container_title | Thin solid films |
| container_volume | 519 |
| creator | Jeong, Woong Hee Kim, Gun Hee Kim, Dong Lim Shin, Hyun Soo Kim, Hyun Jae Ryu, Myung-Kwan Park, Kyung-Bae Seon, Jong-Baek Lee, Sang-Yoon |
| description | In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively. |
| doi_str_mv | 10.1016/j.tsf.2010.12.210 |
| format | Article |
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Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.12.210</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Carrier density ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Gallium ; Hafnium ; Hf incorporation ; Hf-InZnO ; Physics ; Segregations ; Semiconductor devices ; Semiconductor electronics. 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Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.</description><subject>Applied sciences</subject><subject>Carrier density</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium</subject><subject>Hafnium</subject><subject>Hf incorporation</subject><subject>Hf-InZnO</subject><subject>Physics</subject><subject>Segregations</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solution process</subject><subject>Standard electrode potential</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wNteBC9bk9nP4EFEWlso9FIvXkI2O4GU7aZmtoL_3iwtHj0lE553ZvIwdi_4THBRPu1mA9kZ8LGGGQh-wSairmQKVSYu2YTznKcll_ya3RDtOOcCIJuwl7m1aAZKvE2WNnG98eHggx6c72OVkO-O4z09BG-QCNuIpav-s98k28WWbtmV1R3h3fmcso_FfPu2TNeb99Xb6zo1OZRDWlRljUIWpSxMJRuJBQhsCiGKkrd11rQgZWt1W9YW2gJ5U9tMx1esa6iqusym7PHUN-7xdUQa1N6Rwa7TPfojKcEBpAAuR1ScUBM8UUCrDsHtdfiJkBplqZ2KstQoSwlQUVbMPJzbazK6s0H3xtFfEPKsyCGXkXs-cRj_-u0wKDIOe4OtC1Gjar37Z8ovJgx9SQ</recordid><startdate>20110630</startdate><enddate>20110630</enddate><creator>Jeong, Woong Hee</creator><creator>Kim, Gun Hee</creator><creator>Kim, Dong Lim</creator><creator>Shin, Hyun Soo</creator><creator>Kim, Hyun Jae</creator><creator>Ryu, Myung-Kwan</creator><creator>Park, Kyung-Bae</creator><creator>Seon, Jong-Baek</creator><creator>Lee, Sang-Yoon</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110630</creationdate><title>Effects of Hf incorporation in solution-processed Hf-InZnO TFTs</title><author>Jeong, Woong Hee ; Kim, Gun Hee ; Kim, Dong Lim ; Shin, Hyun Soo ; Kim, Hyun Jae ; Ryu, Myung-Kwan ; Park, Kyung-Bae ; Seon, Jong-Baek ; Lee, Sang-Yoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-5768e195695c79b9e521eb511560d83bd299dfad68f2d5e0b8f3abd2e88277863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Carrier density</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium</topic><topic>Hafnium</topic><topic>Hf incorporation</topic><topic>Hf-InZnO</topic><topic>Physics</topic><topic>Segregations</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. 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Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.12.210</doi><tpages>4</tpages></addata></record> |
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| subjects | Applied sciences Carrier density Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Electronics Exact sciences and technology Gallium Hafnium Hf incorporation Hf-InZnO Physics Segregations Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solution process Standard electrode potential Thin film transistors Thin films Threshold voltage Transistors |
| title | Effects of Hf incorporation in solution-processed Hf-InZnO TFTs |
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