Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with...
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creator | Demiguel, S. Giraudet, L. Joulaud, L. Decobert, J. Blache, F. Coupe, V. Jorge, F. Pagnod-Rossiaux, P. Boucherez, E. Achouche, M. Devaux, F. |
description | The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes. |
doi_str_mv | 10.1109/JLT.2002.806752 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1022897887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1178132</ieee_id><sourcerecordid>2430824421</sourcerecordid><originalsourceid>FETCH-LOGICAL-i326t-12a8eaa0065caaafd6954e7feb275746cb3cf298dcb23da1b14718b40dd36f613</originalsourceid><addsrcrecordid>eNp90D1vFDEQBuAVAokjUFPQWEgQmr34a_1RoigJoJNoQr2atWcvjnzrxfYG5Wfwj9lTIiEoUk0xj97RvE3zltEtY9SefdtdbzmlfGuo0h1_1mxY15mWcyaeNxuqhWiN5vJl86qUW0qZlEZvmt8XdzBhcTjVeE9cWuaInsw3qSYfksdCwlRxn6GGaU-A-LQMEdtSYY-kwoyZjCkTSdur4awQmOcY3IrTVFqXDjPkYxzmFR1gckh-hXpDSvDYhhiXQ5ig_nvwdfNihFjwzeM8aX5cXlyff2l336--nn_etUFwVVvGwSAApapzADB6ZTuJesSB605L5QbhRm6NdwMXHtjApGZmkNR7oUbFxElz-pA75_RzwVL7Q1h7iHHtIy2lt1RbpSw7yo9PSm6UsVTqFX56EjLKubHamCN9_x-9TUue1od7Y6TsrOF8RR8eERQHccxrg6H0cw4HyPc9k51ktlOre_fgAiL-XTNtmODiD7jlqPA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884459822</pqid></control><display><type>article</type><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><source>IEEE Electronic Library (IEL)</source><creator>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</creator><creatorcontrib>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</creatorcontrib><description>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2002.806752</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Bandwidth ; Compatibility ; Devices ; Electric power generation ; Electronics ; Exact sciences and technology ; Fibers ; Handling ; Materials handling ; Optical device fabrication ; Optical devices ; Optical fiber devices ; Optical fiber polarization ; Optical saturation ; Optical surface waves ; Optoelectronic devices ; Packaging ; Photodiodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stimulated emission</subject><ispartof>Journal of lightwave technology, 2002-12, Vol.20 (12), p.2004-2014</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1178132$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1178132$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14541956$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Demiguel, S.</creatorcontrib><creatorcontrib>Giraudet, L.</creatorcontrib><creatorcontrib>Joulaud, L.</creatorcontrib><creatorcontrib>Decobert, J.</creatorcontrib><creatorcontrib>Blache, F.</creatorcontrib><creatorcontrib>Coupe, V.</creatorcontrib><creatorcontrib>Jorge, F.</creatorcontrib><creatorcontrib>Pagnod-Rossiaux, P.</creatorcontrib><creatorcontrib>Boucherez, E.</creatorcontrib><creatorcontrib>Achouche, M.</creatorcontrib><creatorcontrib>Devaux, F.</creatorcontrib><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Compatibility</subject><subject>Devices</subject><subject>Electric power generation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fibers</subject><subject>Handling</subject><subject>Materials handling</subject><subject>Optical device fabrication</subject><subject>Optical devices</subject><subject>Optical fiber devices</subject><subject>Optical fiber polarization</subject><subject>Optical saturation</subject><subject>Optical surface waves</subject><subject>Optoelectronic devices</subject><subject>Packaging</subject><subject>Photodiodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stimulated emission</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90D1vFDEQBuAVAokjUFPQWEgQmr34a_1RoigJoJNoQr2atWcvjnzrxfYG5Wfwj9lTIiEoUk0xj97RvE3zltEtY9SefdtdbzmlfGuo0h1_1mxY15mWcyaeNxuqhWiN5vJl86qUW0qZlEZvmt8XdzBhcTjVeE9cWuaInsw3qSYfksdCwlRxn6GGaU-A-LQMEdtSYY-kwoyZjCkTSdur4awQmOcY3IrTVFqXDjPkYxzmFR1gckh-hXpDSvDYhhiXQ5ig_nvwdfNihFjwzeM8aX5cXlyff2l336--nn_etUFwVVvGwSAApapzADB6ZTuJesSB605L5QbhRm6NdwMXHtjApGZmkNR7oUbFxElz-pA75_RzwVL7Q1h7iHHtIy2lt1RbpSw7yo9PSm6UsVTqFX56EjLKubHamCN9_x-9TUue1od7Y6TsrOF8RR8eERQHccxrg6H0cw4HyPc9k51ktlOre_fgAiL-XTNtmODiD7jlqPA</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Demiguel, S.</creator><creator>Giraudet, L.</creator><creator>Joulaud, L.</creator><creator>Decobert, J.</creator><creator>Blache, F.</creator><creator>Coupe, V.</creator><creator>Jorge, F.</creator><creator>Pagnod-Rossiaux, P.</creator><creator>Boucherez, E.</creator><creator>Achouche, M.</creator><creator>Devaux, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>FR3</scope><scope>KR7</scope></search><sort><creationdate>20021201</creationdate><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><author>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i326t-12a8eaa0065caaafd6954e7feb275746cb3cf298dcb23da1b14718b40dd36f613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Compatibility</topic><topic>Devices</topic><topic>Electric power generation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fibers</topic><topic>Handling</topic><topic>Materials handling</topic><topic>Optical device fabrication</topic><topic>Optical devices</topic><topic>Optical fiber devices</topic><topic>Optical fiber polarization</topic><topic>Optical saturation</topic><topic>Optical surface waves</topic><topic>Optoelectronic devices</topic><topic>Packaging</topic><topic>Photodiodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stimulated emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Demiguel, S.</creatorcontrib><creatorcontrib>Giraudet, L.</creatorcontrib><creatorcontrib>Joulaud, L.</creatorcontrib><creatorcontrib>Decobert, J.</creatorcontrib><creatorcontrib>Blache, F.</creatorcontrib><creatorcontrib>Coupe, V.</creatorcontrib><creatorcontrib>Jorge, F.</creatorcontrib><creatorcontrib>Pagnod-Rossiaux, P.</creatorcontrib><creatorcontrib>Boucherez, E.</creatorcontrib><creatorcontrib>Achouche, M.</creatorcontrib><creatorcontrib>Devaux, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Demiguel, S.</au><au>Giraudet, L.</au><au>Joulaud, L.</au><au>Decobert, J.</au><au>Blache, F.</au><au>Coupe, V.</au><au>Jorge, F.</au><au>Pagnod-Rossiaux, P.</au><au>Boucherez, E.</au><au>Achouche, M.</au><au>Devaux, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2002-12-01</date><risdate>2002</risdate><volume>20</volume><issue>12</issue><spage>2004</spage><epage>2014</epage><pages>2004-2014</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JLT.2002.806752</doi><tpages>11</tpages></addata></record> |
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subjects | Amplifiers Applied sciences Bandwidth Compatibility Devices Electric power generation Electronics Exact sciences and technology Fibers Handling Materials handling Optical device fabrication Optical devices Optical fiber devices Optical fiber polarization Optical saturation Optical surface waves Optoelectronic devices Packaging Photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stimulated emission |
title | Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T15%3A49%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evanescently%20coupled%20photodiodes%20integrating%20a%20double-stage%20taper%20for%2040-Gb/s%20applications-compared%20performance%20with%20side-illuminated%20photodiodes&rft.jtitle=Journal%20of%20lightwave%20technology&rft.au=Demiguel,%20S.&rft.date=2002-12-01&rft.volume=20&rft.issue=12&rft.spage=2004&rft.epage=2014&rft.pages=2004-2014&rft.issn=0733-8724&rft.eissn=1558-2213&rft.coden=JLTEDG&rft_id=info:doi/10.1109/JLT.2002.806752&rft_dat=%3Cproquest_RIE%3E2430824421%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884459822&rft_id=info:pmid/&rft_ieee_id=1178132&rfr_iscdi=true |