Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of lightwave technology 2002-12, Vol.20 (12), p.2004-2014
Hauptverfasser: Demiguel, S., Giraudet, L., Joulaud, L., Decobert, J., Blache, F., Coupe, V., Jorge, F., Pagnod-Rossiaux, P., Boucherez, E., Achouche, M., Devaux, F.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2014
container_issue 12
container_start_page 2004
container_title Journal of lightwave technology
container_volume 20
creator Demiguel, S.
Giraudet, L.
Joulaud, L.
Decobert, J.
Blache, F.
Coupe, V.
Jorge, F.
Pagnod-Rossiaux, P.
Boucherez, E.
Achouche, M.
Devaux, F.
description The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.
doi_str_mv 10.1109/JLT.2002.806752
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1022897887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1178132</ieee_id><sourcerecordid>2430824421</sourcerecordid><originalsourceid>FETCH-LOGICAL-i326t-12a8eaa0065caaafd6954e7feb275746cb3cf298dcb23da1b14718b40dd36f613</originalsourceid><addsrcrecordid>eNp90D1vFDEQBuAVAokjUFPQWEgQmr34a_1RoigJoJNoQr2atWcvjnzrxfYG5Wfwj9lTIiEoUk0xj97RvE3zltEtY9SefdtdbzmlfGuo0h1_1mxY15mWcyaeNxuqhWiN5vJl86qUW0qZlEZvmt8XdzBhcTjVeE9cWuaInsw3qSYfksdCwlRxn6GGaU-A-LQMEdtSYY-kwoyZjCkTSdur4awQmOcY3IrTVFqXDjPkYxzmFR1gckh-hXpDSvDYhhiXQ5ig_nvwdfNihFjwzeM8aX5cXlyff2l336--nn_etUFwVVvGwSAApapzADB6ZTuJesSB605L5QbhRm6NdwMXHtjApGZmkNR7oUbFxElz-pA75_RzwVL7Q1h7iHHtIy2lt1RbpSw7yo9PSm6UsVTqFX56EjLKubHamCN9_x-9TUue1od7Y6TsrOF8RR8eERQHccxrg6H0cw4HyPc9k51ktlOre_fgAiL-XTNtmODiD7jlqPA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884459822</pqid></control><display><type>article</type><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><source>IEEE Electronic Library (IEL)</source><creator>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</creator><creatorcontrib>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</creatorcontrib><description>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2002.806752</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Bandwidth ; Compatibility ; Devices ; Electric power generation ; Electronics ; Exact sciences and technology ; Fibers ; Handling ; Materials handling ; Optical device fabrication ; Optical devices ; Optical fiber devices ; Optical fiber polarization ; Optical saturation ; Optical surface waves ; Optoelectronic devices ; Packaging ; Photodiodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stimulated emission</subject><ispartof>Journal of lightwave technology, 2002-12, Vol.20 (12), p.2004-2014</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1178132$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1178132$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14541956$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Demiguel, S.</creatorcontrib><creatorcontrib>Giraudet, L.</creatorcontrib><creatorcontrib>Joulaud, L.</creatorcontrib><creatorcontrib>Decobert, J.</creatorcontrib><creatorcontrib>Blache, F.</creatorcontrib><creatorcontrib>Coupe, V.</creatorcontrib><creatorcontrib>Jorge, F.</creatorcontrib><creatorcontrib>Pagnod-Rossiaux, P.</creatorcontrib><creatorcontrib>Boucherez, E.</creatorcontrib><creatorcontrib>Achouche, M.</creatorcontrib><creatorcontrib>Devaux, F.</creatorcontrib><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Compatibility</subject><subject>Devices</subject><subject>Electric power generation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fibers</subject><subject>Handling</subject><subject>Materials handling</subject><subject>Optical device fabrication</subject><subject>Optical devices</subject><subject>Optical fiber devices</subject><subject>Optical fiber polarization</subject><subject>Optical saturation</subject><subject>Optical surface waves</subject><subject>Optoelectronic devices</subject><subject>Packaging</subject><subject>Photodiodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stimulated emission</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90D1vFDEQBuAVAokjUFPQWEgQmr34a_1RoigJoJNoQr2atWcvjnzrxfYG5Wfwj9lTIiEoUk0xj97RvE3zltEtY9SefdtdbzmlfGuo0h1_1mxY15mWcyaeNxuqhWiN5vJl86qUW0qZlEZvmt8XdzBhcTjVeE9cWuaInsw3qSYfksdCwlRxn6GGaU-A-LQMEdtSYY-kwoyZjCkTSdur4awQmOcY3IrTVFqXDjPkYxzmFR1gckh-hXpDSvDYhhiXQ5ig_nvwdfNihFjwzeM8aX5cXlyff2l336--nn_etUFwVVvGwSAApapzADB6ZTuJesSB605L5QbhRm6NdwMXHtjApGZmkNR7oUbFxElz-pA75_RzwVL7Q1h7iHHtIy2lt1RbpSw7yo9PSm6UsVTqFX56EjLKubHamCN9_x-9TUue1od7Y6TsrOF8RR8eERQHccxrg6H0cw4HyPc9k51ktlOre_fgAiL-XTNtmODiD7jlqPA</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Demiguel, S.</creator><creator>Giraudet, L.</creator><creator>Joulaud, L.</creator><creator>Decobert, J.</creator><creator>Blache, F.</creator><creator>Coupe, V.</creator><creator>Jorge, F.</creator><creator>Pagnod-Rossiaux, P.</creator><creator>Boucherez, E.</creator><creator>Achouche, M.</creator><creator>Devaux, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>FR3</scope><scope>KR7</scope></search><sort><creationdate>20021201</creationdate><title>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</title><author>Demiguel, S. ; Giraudet, L. ; Joulaud, L. ; Decobert, J. ; Blache, F. ; Coupe, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i326t-12a8eaa0065caaafd6954e7feb275746cb3cf298dcb23da1b14718b40dd36f613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Compatibility</topic><topic>Devices</topic><topic>Electric power generation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fibers</topic><topic>Handling</topic><topic>Materials handling</topic><topic>Optical device fabrication</topic><topic>Optical devices</topic><topic>Optical fiber devices</topic><topic>Optical fiber polarization</topic><topic>Optical saturation</topic><topic>Optical surface waves</topic><topic>Optoelectronic devices</topic><topic>Packaging</topic><topic>Photodiodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stimulated emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Demiguel, S.</creatorcontrib><creatorcontrib>Giraudet, L.</creatorcontrib><creatorcontrib>Joulaud, L.</creatorcontrib><creatorcontrib>Decobert, J.</creatorcontrib><creatorcontrib>Blache, F.</creatorcontrib><creatorcontrib>Coupe, V.</creatorcontrib><creatorcontrib>Jorge, F.</creatorcontrib><creatorcontrib>Pagnod-Rossiaux, P.</creatorcontrib><creatorcontrib>Boucherez, E.</creatorcontrib><creatorcontrib>Achouche, M.</creatorcontrib><creatorcontrib>Devaux, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Demiguel, S.</au><au>Giraudet, L.</au><au>Joulaud, L.</au><au>Decobert, J.</au><au>Blache, F.</au><au>Coupe, V.</au><au>Jorge, F.</au><au>Pagnod-Rossiaux, P.</au><au>Boucherez, E.</au><au>Achouche, M.</au><au>Devaux, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2002-12-01</date><risdate>2002</risdate><volume>20</volume><issue>12</issue><spage>2004</spage><epage>2014</epage><pages>2004-2014</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JLT.2002.806752</doi><tpages>11</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0733-8724
ispartof Journal of lightwave technology, 2002-12, Vol.20 (12), p.2004-2014
issn 0733-8724
1558-2213
language eng
recordid cdi_proquest_miscellaneous_1022897887
source IEEE Electronic Library (IEL)
subjects Amplifiers
Applied sciences
Bandwidth
Compatibility
Devices
Electric power generation
Electronics
Exact sciences and technology
Fibers
Handling
Materials handling
Optical device fabrication
Optical devices
Optical fiber devices
Optical fiber polarization
Optical saturation
Optical surface waves
Optoelectronic devices
Packaging
Photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stimulated emission
title Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T15%3A49%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evanescently%20coupled%20photodiodes%20integrating%20a%20double-stage%20taper%20for%2040-Gb/s%20applications-compared%20performance%20with%20side-illuminated%20photodiodes&rft.jtitle=Journal%20of%20lightwave%20technology&rft.au=Demiguel,%20S.&rft.date=2002-12-01&rft.volume=20&rft.issue=12&rft.spage=2004&rft.epage=2014&rft.pages=2004-2014&rft.issn=0733-8724&rft.eissn=1558-2213&rft.coden=JLTEDG&rft_id=info:doi/10.1109/JLT.2002.806752&rft_dat=%3Cproquest_RIE%3E2430824421%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884459822&rft_id=info:pmid/&rft_ieee_id=1178132&rfr_iscdi=true