Polarization conversion in passive deep-etched GaAs/AlGaAs waveguides
Experimental results are presented to demonstrate polarization conversion in passive deep-etched gallium arsenide waveguides. The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitati...
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| Veröffentlicht in: | Journal of lightwave technology 2006-03, Vol.24 (3), p.1425-1432 |
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| container_title | Journal of lightwave technology |
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| creator | Finlayson, E.D. Heaton, J.M. Rahman, B.M.A. Obayya, S.S.A. |
| description | Experimental results are presented to demonstrate polarization conversion in passive deep-etched gallium arsenide waveguides. The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitative agreement with vector finite element method (VFEM) simulations is shown. A coupled-mode formulation is used to describe the behavior. The results are compared with an elliptical-polarization analysis, obtained from measurements of the polarization angles of the fundamental waveguide modes and the difference between their effective indices. A novel technique used to carry out effective-index-difference measurements is reported |
| doi_str_mv | 10.1109/JLT.2005.863240 |
| format | Article |
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The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitative agreement with vector finite element method (VFEM) simulations is shown. A coupled-mode formulation is used to describe the behavior. The results are compared with an elliptical-polarization analysis, obtained from measurements of the polarization angles of the fundamental waveguide modes and the difference between their effective indices. A novel technique used to carry out effective-index-difference measurements is reported</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2005.863240</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium arsenides ; Applied sciences ; Asymmetry ; Circuit properties ; Conversion ; Cross sections ; Dielectrics ; Electric, optical and optoelectronic circuits ; Electronics ; Electrooptical waveguides ; Exact sciences and technology ; Finite element methods ; Gallium arsenide ; Integrated optics ; Integrated optics. 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The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitative agreement with vector finite element method (VFEM) simulations is shown. A coupled-mode formulation is used to describe the behavior. The results are compared with an elliptical-polarization analysis, obtained from measurements of the polarization angles of the fundamental waveguide modes and the difference between their effective indices. A novel technique used to carry out effective-index-difference measurements is reported</description><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Asymmetry</subject><subject>Circuit properties</subject><subject>Conversion</subject><subject>Cross sections</subject><subject>Dielectrics</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Electrooptical waveguides</subject><subject>Exact sciences and technology</subject><subject>Finite element methods</subject><subject>Gallium arsenide</subject><subject>Integrated optics</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Mathematical analysis</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical devices</subject><subject>Optical polarization</subject><subject>Optical waveguide theory</subject><subject>Optical waveguides</subject><subject>Polarization</subject><subject>Semiconductor waveguides</subject><subject>Waveguide components</subject><subject>Waveguides</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU1rGzEQhkVooK6Tcw-5LIU2uaw9-tYeTchXMSQH57xMdketwmbXlWyX5NdHiwOBHtLTDMwzzwi9jH3lMOMcqvnP5WomAPTMGSkUHLAJ19qVQnD5iU3ASlk6K9Rn9iWlRwCulLMTdnE3dBjDC27C0BfN0O8oprENfbHGlMKOipZoXdKm-U1tcYWLNF90Yyn-4o5-bUNL6YgdeuwSHb_VKbu_vFidX5fL26ub88WybJTSmzI_yEP74GXFHVmSaLD1HPWDAQRnUQptJWjnuENLHmVlVFvx1lvfcE9GTtnp3ruOw58tpU39FFJDXYc9DdtUu8oIkFxWmfzxISkq4YzR-v-gA20kiAyefQhyECLfl2p0fvsHfRy2sc8_U-ejwEXGMjTfQ00cUork63UMTxifs6keE61zovWYaL1PNG98f9NiarDzEfsmpPc1qytt3Gg-2XOBiN7HBrRURr4CgcCnBA</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Finlayson, E.D.</creator><creator>Heaton, J.M.</creator><creator>Rahman, B.M.A.</creator><creator>Obayya, S.S.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium arsenides Applied sciences Asymmetry Circuit properties Conversion Cross sections Dielectrics Electric, optical and optoelectronic circuits Electronics Electrooptical waveguides Exact sciences and technology Finite element methods Gallium arsenide Integrated optics Integrated optics. Optical fibers and wave guides Mathematical analysis Optical and optoelectronic circuits Optical devices Optical polarization Optical waveguide theory Optical waveguides Polarization Semiconductor waveguides Waveguide components Waveguides |
| title | Polarization conversion in passive deep-etched GaAs/AlGaAs waveguides |
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