Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er
We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO sub(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and incre...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2012-02, Vol.45 (4), p.045103-1-5 |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Jambois, O Ramirez, J M Berencen, Y Navarro-Urrios, D Anopchenko, A Marconi, A Prtljaga, N Tengattini, A Pellegrino, P Daldosso, N Pavesi, L Colonna, J-P Fedeli, J-M Garrido, B |
| description | We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO sub(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed. |
| doi_str_mv | 10.1088/0022-3727/45/4/045103 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1022891198</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1022891198</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_10228911983</originalsourceid><addsrcrecordid>eNqVjj9PwzAUxD2A1AL9CEhvDEPJc_4Qd0ZBbAztHpnkmRo5dvFzhPrtMQixM93p7vTTCXEr8V6iUiViVW3rrurKpi2bEptWYn0h1n_5SlwxvyNi-6DkWsTeGBoTBAPpSKC9J-2sf4MUSaeZfGII_qcjl4cxuGW2nngkP-bMGDvabM_fhL19AV5ei-oOnD5TZJjCiSb4tOmYy0yfoI834tJox7T51WtRPPWHx-ftKYaPhTgNs81457SnsPAg83W1k3Kn6n9MvwCFzVPH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1022891198</pqid></control><display><type>article</type><title>Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Jambois, O ; Ramirez, J M ; Berencen, Y ; Navarro-Urrios, D ; Anopchenko, A ; Marconi, A ; Prtljaga, N ; Tengattini, A ; Pellegrino, P ; Daldosso, N ; Pavesi, L ; Colonna, J-P ; Fedeli, J-M ; Garrido, B</creator><creatorcontrib>Jambois, O ; Ramirez, J M ; Berencen, Y ; Navarro-Urrios, D ; Anopchenko, A ; Marconi, A ; Prtljaga, N ; Tengattini, A ; Pellegrino, P ; Daldosso, N ; Pavesi, L ; Colonna, J-P ; Fedeli, J-M ; Garrido, B</creatorcontrib><description>We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO sub(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.</description><identifier>ISSN: 0022-3727</identifier><identifier>DOI: 10.1088/0022-3727/45/4/045103</identifier><language>eng</language><subject>Annealing ; Electrical resistivity ; Electroluminescence ; Erbium ; Furnaces ; Resistivity ; Silicon ; Silicon dioxide</subject><ispartof>Journal of physics. D, Applied physics, 2012-02, Vol.45 (4), p.045103-1-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Jambois, O</creatorcontrib><creatorcontrib>Ramirez, J M</creatorcontrib><creatorcontrib>Berencen, Y</creatorcontrib><creatorcontrib>Navarro-Urrios, D</creatorcontrib><creatorcontrib>Anopchenko, A</creatorcontrib><creatorcontrib>Marconi, A</creatorcontrib><creatorcontrib>Prtljaga, N</creatorcontrib><creatorcontrib>Tengattini, A</creatorcontrib><creatorcontrib>Pellegrino, P</creatorcontrib><creatorcontrib>Daldosso, N</creatorcontrib><creatorcontrib>Pavesi, L</creatorcontrib><creatorcontrib>Colonna, J-P</creatorcontrib><creatorcontrib>Fedeli, J-M</creatorcontrib><creatorcontrib>Garrido, B</creatorcontrib><title>Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er</title><title>Journal of physics. D, Applied physics</title><description>We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO sub(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.</description><subject>Annealing</subject><subject>Electrical resistivity</subject><subject>Electroluminescence</subject><subject>Erbium</subject><subject>Furnaces</subject><subject>Resistivity</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><issn>0022-3727</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVjj9PwzAUxD2A1AL9CEhvDEPJc_4Qd0ZBbAztHpnkmRo5dvFzhPrtMQixM93p7vTTCXEr8V6iUiViVW3rrurKpi2bEptWYn0h1n_5SlwxvyNi-6DkWsTeGBoTBAPpSKC9J-2sf4MUSaeZfGII_qcjl4cxuGW2nngkP-bMGDvabM_fhL19AV5ei-oOnD5TZJjCiSb4tOmYy0yfoI834tJox7T51WtRPPWHx-ftKYaPhTgNs81457SnsPAg83W1k3Kn6n9MvwCFzVPH</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Jambois, O</creator><creator>Ramirez, J M</creator><creator>Berencen, Y</creator><creator>Navarro-Urrios, D</creator><creator>Anopchenko, A</creator><creator>Marconi, A</creator><creator>Prtljaga, N</creator><creator>Tengattini, A</creator><creator>Pellegrino, P</creator><creator>Daldosso, N</creator><creator>Pavesi, L</creator><creator>Colonna, J-P</creator><creator>Fedeli, J-M</creator><creator>Garrido, B</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120201</creationdate><title>Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er</title><author>Jambois, O ; Ramirez, J M ; Berencen, Y ; Navarro-Urrios, D ; Anopchenko, A ; Marconi, A ; Prtljaga, N ; Tengattini, A ; Pellegrino, P ; Daldosso, N ; Pavesi, L ; Colonna, J-P ; Fedeli, J-M ; Garrido, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_10228911983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Electrical resistivity</topic><topic>Electroluminescence</topic><topic>Erbium</topic><topic>Furnaces</topic><topic>Resistivity</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jambois, O</creatorcontrib><creatorcontrib>Ramirez, J M</creatorcontrib><creatorcontrib>Berencen, Y</creatorcontrib><creatorcontrib>Navarro-Urrios, D</creatorcontrib><creatorcontrib>Anopchenko, A</creatorcontrib><creatorcontrib>Marconi, A</creatorcontrib><creatorcontrib>Prtljaga, N</creatorcontrib><creatorcontrib>Tengattini, A</creatorcontrib><creatorcontrib>Pellegrino, P</creatorcontrib><creatorcontrib>Daldosso, N</creatorcontrib><creatorcontrib>Pavesi, L</creatorcontrib><creatorcontrib>Colonna, J-P</creatorcontrib><creatorcontrib>Fedeli, J-M</creatorcontrib><creatorcontrib>Garrido, B</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jambois, O</au><au>Ramirez, J M</au><au>Berencen, Y</au><au>Navarro-Urrios, D</au><au>Anopchenko, A</au><au>Marconi, A</au><au>Prtljaga, N</au><au>Tengattini, A</au><au>Pellegrino, P</au><au>Daldosso, N</au><au>Pavesi, L</au><au>Colonna, J-P</au><au>Fedeli, J-M</au><au>Garrido, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2012-02-01</date><risdate>2012</risdate><volume>45</volume><issue>4</issue><spage>045103</spage><epage>1-5</epage><pages>045103-1-5</pages><issn>0022-3727</issn><abstract>We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO sub(2) layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.</abstract><doi>10.1088/0022-3727/45/4/045103</doi></addata></record> |
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| ispartof | Journal of physics. D, Applied physics, 2012-02, Vol.45 (4), p.045103-1-5 |
| issn | 0022-3727 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Annealing Electrical resistivity Electroluminescence Erbium Furnaces Resistivity Silicon Silicon dioxide |
| title | Effect of the annealing treatments on the electroluminescence efficiency of SiO sub(2) layers doped with Si and Er |
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